Defect annealing in a II–VI laser diode structure under intense optical excitation

Jordan, C.; Fewer, D. T.; Donegan, John F.; Logue, F. P.; McCabe, Eithne M.; Huynh, A.; Taniguchi, S.; Hino, T.; Nakano, K.; Ishibashi, Akira

doi:10.1016/s0022-0248(98)80122-x

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…Recent investigation of the short-term photoluminescence degradation mechanisms in AlGaInP LED structures exposed to intense laser radiation [37], [38] proved that both the growth and annealing of nonradiative recombination defects in AlGaInP LEDs are due to recombination-enhanced processes [39], [40] rather than to current-driven ones. It is to be noted that in [37] and [38], the minima of optical output were observed on the same 1-h scale as in our paper, which strongly implies that the above-described evolution of photoelectrical characteristics is also due to the defects that are related to recombination-enhanced processes of growth and annealing.…”

Section: Discussionmentioning

confidence: 99%

Effect of Aging on the Photoelectrical Properties of AlGaInP LEDs

Meškauskas

Dabašinskas

Žukauskas

2016

IEEE Trans. Electron Devices

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We report on the nonmonotonous variation of photoelectrical properties of commercial AlGaInP LEDs during the aging process. The light-generated current and short-circuit photocurrent were found to drop by the factors of 2 and 1.5, respectively, after about 3 h of aging at the rated forward current of 1400 mA with subsequent recovery and stabilization within ∼1000 h of aging. The temporal minima of photocurrents were accompanied by increased photoconductivity revealed from the negative differential photovoltage under modulated photoexcitation as well as by the minimum of optical output and the maximum of the ideality factor of the LEDs at low forward currents. The observed temporal variation of the photoelectrical properties was attributed to the interplay of recombinationenhanced growth and annealing of defects responsible for nonradiative recombination and photoconductivity in the active and cladding layers of the LEDs, respectively.

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Section: Discussionmentioning

confidence: 99%

Effect of Aging on the Photoelectrical Properties of AlGaInP LEDs

Meškauskas

Dabašinskas

Žukauskas

2016

IEEE Trans. Electron Devices

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“…A diffusivity of 10 -22 m 2 s -1 , however, was considered as detection limit for the simulation of the secondary ion mass spectroscopy profiles analysed, and hence all the measurements in [4,6] were performed at elevated temperatures above 670 K to ensure detectable diffusivities. On the other hand, it has been reported that the photoluminescence intensity of a ZnCdSe/ ZnSSe/ZnMgSSe laser structure increased not only after thermal annealing but also after intense optical excitation by an external laser beam [8]. This suggests a relationship between thermal annealing on the one hand and optical pumping on the other hand via point defects [9].…”

Section: Introductionmentioning

confidence: 99%

Thermal Stability of ZnMgSSe/ZnSe Laser Heterostructures

Marko

Луценко

Yablonskii

et al. 2001

phys. stat. sol. (a)

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Subject classification: 78.45.+h; 78.55.Et; 78.67.De; S8.12 Optically pumped lasing and photoluminescence of ZnMgSSe/ZnSe quantum wells grown by metal-organic vapour phase epitaxy were studied in the temperature interval of 13-650 K. Thermal annealing at high temperatures deteriorated the lasing properties which, however, could be almost completely recovered by subsequent optical excitation above the lasing threshold. The technique of spectrum imaging in a transmission electron microscope with an energy filter and a two-dimensional detector was applied to ZnMgSSe/ZnSe multiple quantum well laser structures. It was found that the main degradation mechanism of ZnMgSSe/ZnSe quantum well heterostructures at temperatures higher than 450 K is the diffusion of S atoms from the barriers into the quantum wells which leads to increasing point defect concentrations in the active layers of the lasers. It was established that stimulated lasing decreases the defect concentration and reduces the laser threshold in the optically pumped ZnMgSSe/ZnSe quantum well lasers after their thermal degradation at 450-650 K.

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Defect annealing in a II–VI laser diode structure under intense optical excitation

Cited by 2 publications

References 3 publications

Effect of Aging on the Photoelectrical Properties of AlGaInP LEDs

Effect of Aging on the Photoelectrical Properties of AlGaInP LEDs

Thermal Stability of ZnMgSSe/ZnSe Laser Heterostructures

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