Defect centers in chemical-mechanical polished MOS oxides

Abstract

Defect centers generated in vacuum-ultraviolet irradiated chemical-mechanical polished oxides have been characterized using electron paramagnetic resonance and C-V analysis. Both oxide trap E', and interface trap PbO centers were detected in unpolished and polished oxides. In addition, another interface defect center known as the Pbl center was only identified in the polished oxides, suggesting that the polishing process altered the SiOdSi interface.