Defect Characteristics of Be-doped GaSb Film Grown on GaAs

Abstract

The defect characteristics of the Be-doped GaSb and no-doped GaSb film grown on GaAs and GaSb substrate respectively were analysed by the method of molecular beam epitaxy (MBE), positron annihilation Doppler broadening spectroscopy (PADBS), X-ray diffraction spectra (XRD) and atomic force microscopy (AFM). The experimental results show that the defects in Be-doped semiconductor GaSb could be attributed to existence of intrinsic defect, which has no complex defects in it. After doped Be atom, the crystallization of GaSb become worse, and the Be existed mainly in the interstitial atom.