2018
DOI: 10.1039/c7ta09245h
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Defect chemistry and electrical properties of sodium bismuth titanate perovskite

Abstract: We review the diversity of the electrical behaviour of NBT induced by various defect mechanisms, including A-site Na or Bi non-stoichiometry, isovalent-substitution, and acceptor- and donor-doping.

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Cited by 167 publications
(93 citation statements)
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“…When the doping level reaches 2 mol% Fe, the total conductivity of all samples again increases by one additional order of magnitude until it saturates above a 2 mol% doping content. This finding again coincides well with recent findings on other acceptor dopants in NBT …”
Section: Resultssupporting
confidence: 93%
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“…When the doping level reaches 2 mol% Fe, the total conductivity of all samples again increases by one additional order of magnitude until it saturates above a 2 mol% doping content. This finding again coincides well with recent findings on other acceptor dopants in NBT …”
Section: Resultssupporting
confidence: 93%
“…However, at higher concentrations the oxygen vacancies are responsible for the dominant ionic conductivity. This behavior has already been reported as a typical feature of NBT based B‐site acceptor doped oxygen ionic conductors and was attributed to a phase and defect dipole formation dependent concentration of mobile vacancies . The total conductivity increases by at least four orders of magnitude over the whole temperature range and saturates for doping levels above 2 mol% Fe.…”
Section: Resultssupporting
confidence: 68%
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“…The existence of a low level of oxide ion conduction in the parent BiVO 4 could be ascribed to the possible uncontrollable Bi deficiency owing to the volatilization of Bi 2 O 3 during the material preparation, which could result in the presence of oxygen vacancies. Bi nonstoichiometry effect on the oxide ion conduction has been demonstrated in Na 0.5 Bi 0.5 TiO 3 -based oxide ion conductors 38,39,41 .…”
Section: Resultsmentioning
confidence: 95%
“…The fluorite-like Bi-O sublattice, which is known as a highly polarizable bonding network 16,38,41 , could offer flexible environments to adapt for rotation and deformation of VO 4 tetrahedra, which is important for the stabilization and migration of oxygen vacancies in a tetrahedra-based structure. Therefore, the Bi-O lattice provides pathways with low diffusion barriers, which are highly beneficial for the migration of oxygen ions.…”
Section: Resultsmentioning
confidence: 99%