Defect chemistry and high-temperature transport in SrFe1−Sn O3–

Merkulov, O.V.; Samigullin, Ruslan R.; Markov, A.A.; Леонидов, И. А.; Патракеев, М.В.

doi:10.1016/j.jssc.2016.08.023

Cited by 14 publications

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“…It can be seen from Figure that the hole mobility of all compositions demonstrates the temperature-activated behavior, which in combination with its low level is characteristic of a small-polaron conduction mechanism. The activation energy, the values of which, according to Table , vary between 0.15 and 0.2 eV, is close to that in other derivatives of perovskite-type strontium ferrites. ,, Partial substitution of cerium for strontium does not have a strong impact on the hole mobility. Nonmonotonous variation of mobility and its activation energy upon an increase in the cerium content should be attributed to the complex influence of the dopant.…”

Section: Results and Discussionsupporting

confidence: 66%

“…The activation energy, the values of which, according to Table 3, vary between 0.15 and 0.2 eV, is close to that in other derivatives of perovskitetype strontium ferrites. 30,35,36 Partial substitution of cerium for strontium does not have a strong impact on the hole mobility. Nonmonotonous variation of mobility and its activation energy upon an increase in the cerium content should be attributed to the complex influence of the dopant.…”

Section: Models For Electrical Conductivitymentioning

confidence: 99%

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Impact of Cerium Content on Ion and Electron Transport in Sr_1–xCe_xFeO_3–δ

et al. 2021

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The electrical conductivity of perovskite-type Sr1–x Ce x FeO3–δ (x = 0.05, 0.10, and 0.15) was measured in the range of oxygen partial pressure from 10–19 to 0.5 atm at temperatures 750–950 °C. The results were analyzed using the concentration of iron and cerium ions in different oxidation states derived from the p O2 –T–δ diagrams of these compositions by thermodynamic analysis of defect equilibrium. Three models assuming different involvements of cerium and iron in electron transport in addition to hole and oxygen-ion conductivity were used for the simulation of electrical conductivity data. The best fit to the experimental data was obtained in the model, suggesting a minor contribution of electrons localized on cerium ions to conductivity via a separate network with low carrier mobility. The averaged mobility values for holes, electrons, and oxygen ions can be indicated for all compositions as 0.04, 5 × 10–3, and 1 × 10–5 cm2 V–1 s–1 with activation energies of 0.17, 0.5, and 0.7 eV, respectively. An increase in the cerium content in Sr1–x Ce x FeO3–δ from 0.05 to 0.15 was found to result in an almost 10-fold decrease in ion conductivity, which is attributed to a decrease in the mobility of oxygen ions, whereas it has an insignificant effect on hole and electron conductivity.

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Section: Results and Discussionsupporting

confidence: 66%

Section: Models For Electrical Conductivitymentioning

confidence: 99%

Impact of Cerium Content on Ion and Electron Transport in Sr_1–xCe_xFeO_3–δ

et al. 2021

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Defects in Solids

Tilley

2018

Encyclopedia of Inorganic and Bioinorganic Chemistry

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The chemical aspects of defects of relevance to inorganic crystalline solids are described, especially the close links with the composition of inorganic nonstoichiometric compounds. Section 2 deals with point defect chemistry, including solid solutions and nonstoichiometry, concluding with a description of the Kroger–Vink point defect notation and the formalism required for the incorporation of defect formation into chemical equations. Section 3 describes defects in near stoichiometric monatomic and polyatomic crystals, including Schottky, Frenkel, and antisite defects, together with formulae for the Gibbs energy associated with defect formation. Section 4 covers the inter‐relationship between point defects and electronic conductivity. This includes a description of the visualization of these interdependencies via the Brouwer diagram formalism. Section 5 describes the defect structures associated with color centers, including the important NV centers in diamond. Compounds that contain extremely disordered and mobile cations are covered in Section 6, while Section 7 is concerned with grossly nonstoichiometric crystals, which includes a description of point defect clusters and their chemistry. Section 8 briefly introduces the concepts of defects in materials in which interpolation and intercalation are important. Section 9 covers extended defects, including dislocations, crystallographic shear and twinning, and the extended defects formed by pentagonal columns. The defect chemistry of modular structures, described with reference to perovskite‐related structures, is also described in this section.

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