2006 International Semiconductor Conference 2006
DOI: 10.1109/smicnd.2006.283988
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Defect Chemistry of Cusbs2

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Cited by 9 publications
(13 citation statements)
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“…6 ). 87 , 88 The high proportion of defects also leads to advantageous properties such as the ability to take a high loading of dopants and band gap tuning through the number of defect sites. 89 , 90 Although useful, these properties can also lead to compositional differences between nanocrystals of identical size within a batch leading to broadening on the ensemble properties such as the luminescence peak of colloidal nanocrystals.…”
Section: Ternarymentioning
confidence: 99%
“…6 ). 87 , 88 The high proportion of defects also leads to advantageous properties such as the ability to take a high loading of dopants and band gap tuning through the number of defect sites. 89 , 90 Although useful, these properties can also lead to compositional differences between nanocrystals of identical size within a batch leading to broadening on the ensemble properties such as the luminescence peak of colloidal nanocrystals.…”
Section: Ternarymentioning
confidence: 99%
“…4 CSS, therefore, appears to be a good n-type semiconductor when doped, but thus far p-type conductivity has not been realized. This is quite surprising, as CSS would be expected to have a valence band maximum ͑VBM͒ made up of Cu 3d states mixing with S 3p states, which generally results in materials with good p-type semiconducting ability, e.g., Cu 2 S, 7 group 13 I-III-VI 2 materials, 8 and layered oxychalcogenide materials. 9 In this paper we utilize state of the art screened hybrid density functional theory ͑DFT͒ to investigate the stability of CSS in all of the previously reported I-III-VI 2 structures.…”
mentioning
confidence: 99%
“…The defect chemistry of I-III-VI 2 chalcopyritestructured materials with CuInS 2 , as example, has been reported by Perniu et al [29][30][31]. In ternary and more complex materials deviations from stoichiometry and molecularity can occur.…”
Section: Defect Chemistrymentioning
confidence: 86%