Defect creation in LiNbO₃irradiated by medium masses ions in the electronic stopping power regime

Amorphous tracks in insulators induced by monoatomic and cluster ions

“…5 We note that such a comparison was not made in Ref. 27, and previously, no deviations from the Poisson law were observed in experiments with cluster ions.…”

“…[5][6][7] Recently, Ramos et al performed experiments on LN with Cl and Br ions of 5-10 MeV. 27 These data are not shown in Fig. 2 because they were deduced by assuming a multiple-hit mechanism of the induced lattice disorder which is different from that which was applied in the case of other data.…”

“…27 in the range ␣Ͻ0.25-0.3, where the deviations from the Poisson law are small, and we estimated the damage cross section from the slope of the evolution of the relative disorder ␣ with the fluence. The damage cross sections for irradiation with 5-10 MeV Cl, Br ions and C 6 , C 8 cluster ions agree within experimental error if this procedure is applied.…”

Amorphization kinetics under swift heavy ion irradiation: A cumulative overlapping-track approach

“…Recent experiments on many dielectric and semiconductor crystals have conclusively shown that the damage has some peculiar features such as thresholding [1][2][3][4] and cumulative [3][4][5][6][7] character. The existence of a stopping power threshold to cause lattice amorphization has been satisfactorily explained by the thermal spike model [1,2,[8][9][10] as a meltingresolidification process around the ion trajectory (latent track formation). On the other hand, the cumulative (additive) damage behaviour under successive irradiation is not consistent with such a model.…”

Structural and compositional characterization of LiNbO3 crystals implanted with high energy iron ions

“…In the present case, the situation is further complicated by the sequential implantation processes at increasing energies, since the electronic interaction of the second and third implantation occur in an already damaged region. It was already reported [17][18][19][20][21][22] that for ion implantation processes with energy loss higher than 220 eV/Å occurring on a pre-damaged region, the damage formation is greatly increased. In our case this situation is verified for the third implantation, the one with higher energy since the 220 eV/Å threshold was overcome and the previous implants pre-damaged the crystal matrix.…”