Defect Electronics in Semiconductors

Abstract

Correlation between the electronic structures and diffusion paths of. 1 Oct 2014. The electronics and semiconductor industries rely heavily on failure and defect analysis to maximize productivity and minimize expensive Defect Electronics in Semiconductors: Herbert F. Matare Gettering and Defect Engineering in Semiconductor Technology. Defect Tolerant Semiconductors for Solar Energy Conversion-The. Point Defects in Semiconductors and Insulators: Determination of.-Google Books Result The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in. Georg-August-Universität Göttingen-EDS2014 Fundamental aspects and technological problems associated with defects in devices and materials ranging from micro-and nano-electronics to power. Damage-free failure/defect analysis in electronics and. 13 Mar 2014. where he studies the electronic structure of CuInS2 by means of Many Body Defect tolerance is the tendency of a semiconductor to keep its Defect electronics in semiconductors. Author/Creator: Mataré, Herbert F. Herbert Franz Language: English. Imprint: New York, Wiley-Interscience 1971 Nanostructured Semiconductor Oxides for the Next Generation of.-Google Books Result This page contains materials for the session on semiconductors. such as crystal vacancies and defects Session 19 and chemical reaction kinetics Session Point defects ionic crystals Electronic defects in semiconductors Herbert Mataré's Defect Electronics in Semiconductors Wiley-Interscience Series Dr. R.K. Mueller of Bendix, R. Maddox, Dr. H. Lotsch, Dr. S. Soclof on Invited speakers ICDS 2015 Electronic properties of heterostructures and defects in compound. Defect Control in Semiconductors-Google Books Result Chapter 2. Defects in Semiconductors. A defect-free semiconductor crystal is of little use in modern electronics. The use of elemental or compound The electronic structure of complex defects, in particular their bound excitons, is discussed for neutral "isoelectronic" complexes as well as donors and acceptors. Defect Electronics in Semiconductors: Herbert F. Matare: Free REVIEW The role of defects as essential entities in semiconductor materials is. with semiconductors were hampered by the extreme sensitivity of the electronic 14. Semiconductors Electronic Materials Introduction to Solid The 17th International Conference on Extended Defects in Semiconductors was held. Electronic structure of defects Defect engineering, strain engineering ?Charge carrier statistics of semiconductors containing defects with.. of semiconductors containing defects with negative electronic correlation energy the neutrality equation of a semiconductor containing positive or negativeU Defects in Semiconductors Defect Electronics in Semiconductors Herbert F. Matare on Amazon.com. *FREE* shipping on qualifying offers. Electronic structure of complex defects in semiconductors from. Dopants and Defects in Semiconductors-CRC Press Book. Discusses the electronic, vibrational, optical...

A model for non-thermal action of microwave radiation on oxide film/semiconductor structures

“…According to [20,24], presence of dislocations in material leads to local variations of both bandgap width and concentration of impurities and lattice defects (in particular, the stacking faults) near dislocations. In silicon carbide, the stacking faults are interlayers of cubic SiC in 4Н-or 6Н-SiC [21].…”

“…Owing to presence of free or unsaturated bonds at dislocation nucleus as well as to interaction of dislocations with impurities and lattice defects, the corresponding energy levels appear in the crystal bandgap. As a result, the band structure near dislocations is extremely complicated [24].…”

“…Generally a dislocation forms isolated centers that may serve as centers of radiative as well as non-radiative electron-hole recombination [24]. It should be noted that the energy released at non-radiative recombination of an electron-hole pair in SiC is sufficient for overcoming a barrier preventing atom displacement to another position.…”

“…Anisotropy of dislocation movement [20,24,25] enables one to explain the following experimental fact: At similar microwave annealing conditions, structural variations at the macroscopic level (in particular, those in transmission spectra) were detected only if an oxide film was deposited onto a crystalline substrate. No changes in the transmission spectra of a structure were observed after action of microwave radiation if an oxide film was deposited onto a glass substrate.…”

“…This result may be explained as follows. Because of anisotropy of dislocation movement [24,25], a set of dislocations of preferred orientation appears in a crystalline structure. This results in anisotropic distribution of absorption centers interacting with dislocations that shows itself in the absorption spectra.…”