Defect engineered <i>d</i> ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

Khan, Gobinda Gopal; Ghosh, S.; Sarkar, Ayan; Mandal, Guruprasad; Mukherjee, Goutam Dev; Manju, U.; Banu, Nasrin; Dev, B. N.

doi:10.1063/1.4928952

Cited by 63 publications

(37 citation statements)

References 36 publications

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“…Two broad emission peaks at 330 and 460 nm were found from ITO nanoparticles. The emission peaks in ultraviolet region around 330 nm, which is very close to that of band gap of In 2 O 3 , is believed to be due to the near-band-edge (NBE) radiative transitions related to the photogenerated electrons [33,34]. From the PL spectrum it is clear that the ITO exhibited much stronger ultraviolet emission peaks at 330 and 466 nm.…”

Section: Resultsmentioning

confidence: 72%

Room-temperature ferromagnetic and photoluminescence properties of indium–tin-oxide nanoparticles synthesized by solid-state reaction

et al. 2017

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In the present study, indium-tin-oxide (ITO) nanoparticles were synthesized using solid-state reaction and studied for their structural, vibrational and magnetic properties. The ITO nanoparticles were prepared under reduced pressure, which can increase the oxygen vacancies in the samples. The X-ray diffraction studies confirmed singe-phase cubic bixbyite structure of ITO with average crystallite size of 47 nm. The lattice vibrational studies (FT-IR and Raman spectroscopy) at room temperature indicated that Sn ions were occupied in In 2 O 3 lattice and gives corresponding active vibrational modes in the respective spectra. The magnetic studies at room temperature reveal the ferromagnetic nature of ITO and the strength of magnetization is superior to those of In 2 O 3 and SnO 2. However, the magnetic studies at 100 K revealed reduced ferromagnetism, which could be attributed to reduced itinerary electrons at low temperature. Blue and blue-green emissions were found from the ITO nanoparticles, which could be due to vacancies or surface defects present in the system.

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Section: Resultsmentioning

confidence: 72%

Room-temperature ferromagnetic and photoluminescence properties of indium–tin-oxide nanoparticles synthesized by solid-state reaction

et al. 2017

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“…[53] Again Figure 4d shows the high-resolution spectra of In 3d core-level spectra. The binding energies at 445.14 and 452.48 eV are well assigned to In 3+ 3d 5/2 and 3d 3/2 , [50,54] respectively. As shown in Figure 4d, the splitting of In 3d 5/2 peaks at a binding energy of 440.7 and 444.5 eV indicates the existence of In(0) (440.7 eV) and In (III) (444.5 eV).…”

Section: Bi 2 Te 3 Comprises 15 Normal Modes At γ Point Of the Brillionmentioning

confidence: 85%

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Musah

Novitskii

Serhiienko

et al. 2021

Adv Elect Materials

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Bismuth chalcogenides are promising materials for thermoelectric (TE) application due to their high power factor (product of the square of the Seebeck coefficient and electrical conductivity). However, their high thermal conductivity is an issue of concern. Single doping has proven to be useful in improving TE performance in recent years. Here, it is shown that dual isovalent doping shows the synergistic effect of thermal conductivity reduction and electron density control. The insertion of large atoms in the layered Bi2Te3 structure distorts the crystal lattice and contributes significantly to phonon scattering. The ultralow thermal conductivity (KT = 0.35 W m−1 K−1 at 473 K) compensates for the low power factor and thus enhances TE performance. The density functional theory electronic structure calculation results reveal deep defects states in the valence band, which influences the electronic transport properties of the system. Therefore, the dual dopants (indium and antimony) show a coupled effect of improvement in the density of state near the Fermi level and reduction in the conduction band minimum, thus enhancing electron density. Numerically, it is demonstrated that the dual doping favors acoustic phonon scattering and thus drastically reduces the thermal conductivity.

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“…[ 42 ] As we know, the Raman peak at 365 cm −1 is an In‐O‐In bridging oxygen mode, and the intensity ratio of the peak at 365 cm −1 to the maximum peak at 132 cm −1 can indicate the concentration of oxygen vacancies (V o ). [ 43,44 ] It is clear from Figure that the relative intensity of the In‐O‐In defects peak at 365 cm −1 decrease continuously with increasing annealing temperature, which implies that the concentration of the oxygen vacancies decrease constantly in In 2 O 3 nanocrystals. The result is well consistent with available experimental data on C‐In 2 O 3 crystal structure.…”

Section: Resultsmentioning

confidence: 99%

“…The result is well consistent with available experimental data on C‐In 2 O 3 crystal structure. [ 43,44 ]…”

Section: Resultsmentioning

confidence: 99%

Dependence of the Ferromagnetism on Vacancy Defect in Annealed In₂O₃ Nanocrystals: A Positron Annihilation Study

Wang

Dong

Chen

et al. 2021

Physica Status Solidi (a)

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In2O3 nanoparticles are fabricated by a sol–gel method, and annealed under air atmosphere from 400 to 1200 °C. X‐ray diffraction patterns display that all samples are the cubic bixbyite structure, grain size remains nearly unchanged below 700 °C, but remarkable increases from 35 to 72 nm after annealing up to 1200 °C. Electron microscopy also confirms the grain growth during high‐temperature annealing, and the transmission electron microscopy characterizes good crystallinity inside the grains. Raman spectroscopy indicates that the crystallinity of annealed samples is improving and the concentration of oxygen vacancies is decreasing with the increase in annealing temperature. Positron annihilation lifetime measurements identify that there are a large number of monovacancies and vacancy clusters on the surface of nanoparticles. With the increase in annealing temperature, the monovacancies keep a slight recovery and their concentration increases, but the vacancy clusters become smaller vacancies and their concentration decreases. Room‐temperature ferromagnetism exists in the samples after annealing at 400–1000 °C, and the magnetization decreases gradually with the increase in annealing temperature, which is in coincidence with the recovery of vacancy clusters after annealing. These findings suggest that ferromagnetism in annealed In2O3 nanocrystals might be due to the indium–oxygen vacancy clusters rather than grain size effects.

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Defect engineered d ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

Cited by 63 publications

References 36 publications

Room-temperature ferromagnetic and photoluminescence properties of indium–tin-oxide nanoparticles synthesized by solid-state reaction

Room-temperature ferromagnetic and photoluminescence properties of indium–tin-oxide nanoparticles synthesized by solid-state reaction

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Dependence of the Ferromagnetism on Vacancy Defect in Annealed In₂O₃ Nanocrystals: A Positron Annihilation Study

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Defect engineered d ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

Cited by 63 publications

References 36 publications

Room-temperature ferromagnetic and photoluminescence properties of indium–tin-oxide nanoparticles synthesized by solid-state reaction

Room-temperature ferromagnetic and photoluminescence properties of indium–tin-oxide nanoparticles synthesized by solid-state reaction

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties

Dependence of the Ferromagnetism on Vacancy Defect in Annealed In2O3 Nanocrystals: A Positron Annihilation Study

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Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Dependence of the Ferromagnetism on Vacancy Defect in Annealed In₂O₃ Nanocrystals: A Positron Annihilation Study