Defect Engineering of 2d Monatomic-Layer Materials

Peng, Qing; Crean, Jared; Dearden, Albert K.; Wen, Xiaodong; Bordas, Stéphane; De, Suvranu

doi:10.1142/s0217984913300172

Cited by 42 publications

(34 citation statements)

References 176 publications

(190 reference statements)

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“…Figure shows a typical scanning tunneling microscopic (STM) image of a buckled silicene layer grown on an Ag (111) surface and is in clear agreement with calculated lattice parameters. Detailed review on the deposition of silicene and graphene on various transition metal surfaces is available elsewhere …”

Section: Realizing 2d Elemental Sheetsmentioning

confidence: 99%

“…Detailed review on the deposition of silicene and graphene on various transition metal surfaces is available elsewhere. [ 105 ] From fi rst principle studies, Bhattacharya et al have investigated various other ordered (111) substrates (AlAs, AlP, GaAs, GaP, ZnS, and ZnSe) for the epitaxial growth of silicene. [ 106 ] These studies reveal interesting insights into the infl uence of substrates, affecting the doping characteristics in the 2D nanosheets.…”

Section: Deposition Techniquesmentioning

confidence: 99%

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Elemental Analogues of Graphene: Silicene, Germanene, Stanene, and Phosphorene

Balendhran

Walia

Nili

et al. 2014

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The fascinating electronic and optoelectronic properties of free-standing graphene has led to the exploration of alternative two-dimensional materials that can be easily integrated with current generation of electronic technologies. In contrast to 2D oxide and dichalcogenides, elemental 2D analogues of graphene, which include monolayer silicon (silicene), are fast emerging as promising alternatives, with predictions of high degree of integration with existing technologies. This article reviews this emerging class of 2D elemental materials - silicene, germanene, stanene, and phosphorene--with emphasis on fundamental properties and synthesis techniques. The need for further investigations to establish controlled synthesis techniques and the viability of such elemental 2D materials is highlighted. Future prospects harnessing the ability to manipulate the electronic structure of these materials for nano- and opto-electronic applications are identified.

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Section: Realizing 2d Elemental Sheetsmentioning

confidence: 99%

Section: Deposition Techniquesmentioning

confidence: 99%

Elemental Analogues of Graphene: Silicene, Germanene, Stanene, and Phosphorene

Balendhran

Walia

Nili

et al. 2014

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828

520

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“…14 The knowledge of mechanical properties of a material 15,16 is the base for development of mechanically responsive nanomaterials which will make a signicant contribution to improvements in our lifestyles and our society. 22,23 For instance, there are strains because of the mismatch of lattice constants. First, it is critical in designing parts or structures regarding their practical applications of atomic 2D materials.…”

Section: Introductionmentioning

confidence: 99%

Mechanical properties and stabilities of g-ZnS monolayers

et al. 2015

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We investigate the mechanical properties and stabilities of the planar graphene-like zinc sulfide (g-ZnS) monolayers under various large strains using electronic structure calculations. The g-ZnS has a low inplane stiffness, about 1/8 of that of graphene. The potential profiles and the stress-strain curves indicate that the free standing g-ZnS monolayers can sustain large tensile strains, up to 0.16, 0.22, and 0.19 for armchair, zigzag, and biaxial deformations, respectively. However, both the strength and flexibility are reduced compared to graphene-like zinc oxide monolayers. The third, fourth, and fifth order elastic constants are indispensable for accurate modeling of the mechanical properties under strains larger than 0.02, 0.04, and 0.08 respectively. The second order elastic constants, including in-plane stiffness, are predicted to monotonically increase with pressure, while the trend in the Poisson ratio is reversed. Our results imply that g-ZnS monolayers are mechanically stable under various large strains. The elastic limits provide a safe-guide for strain-engineering the g-ZnS based electronics.

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“…These results derive from the generation of a chemical interaction between PtNP and GDNS breaking C−C triple bonds, which is in agreement with the DFT calculations; the presence of an empty 3d orbital affects the degree of delocalized π -bonding in the carbon lattice. [ 39 ] High-resolution asymmetric C 1s XPS spectra of PtNP-GDNS are shown in Figure 3 B. Four types of sub-peaks can be fi tted at 284.5, 285.2, 286.9, and 288.5 eV, which are ascribed to the C 1s orbital of C−C (sp 2 ), C−C (sp), C−O, and C = O.…”

Section: Doi: 101002/aenm201500296mentioning

confidence: 99%