2022
DOI: 10.1016/j.cej.2021.133617
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Defect engineering of graphynes for energy storage and conversion

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Cited by 27 publications
(10 citation statements)
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“…In the field of energy storage and conversion systems, the beneficial functions of defective (both intrinsic and extrinsic) carbonaceous materials have been extensively studied to improve the performance of rechargeable batteries and electrocatalysts. 99,100 Defect engineering is considered as an effective means of modifying the surface chemistry of carbon skeleton and thus promoting electrochemical reactivity. In carbonaceous materials, intrinsic defects (in 3D structures) are divided into three categories: topological defects, carbon vacancy defects, and edge defects.…”
Section: Role Of Intrinsic Defects On Carbonaceous Materialsmentioning
confidence: 99%
“…In the field of energy storage and conversion systems, the beneficial functions of defective (both intrinsic and extrinsic) carbonaceous materials have been extensively studied to improve the performance of rechargeable batteries and electrocatalysts. 99,100 Defect engineering is considered as an effective means of modifying the surface chemistry of carbon skeleton and thus promoting electrochemical reactivity. In carbonaceous materials, intrinsic defects (in 3D structures) are divided into three categories: topological defects, carbon vacancy defects, and edge defects.…”
Section: Role Of Intrinsic Defects On Carbonaceous Materialsmentioning
confidence: 99%
“…As shown in Figure 1a, GDY exhibits an amorphous form, only in a wide diffraction peak near 25°, which is the (002) crystal plane of GDY. 34,35 MC exhibits that the diffraction peaks at 2θ = 30.50°, 36.20°, 44.33°, 58.46°, and 64.18°correspond to the (220), (311), (400), (511), and (440) crystal planes of MC (PDF#23-1237). The G/MC-x exhibits a distinct MC diffraction peak, which becomes more pronounced as the MC content increases.…”
Section: Xrd and Raman Analysismentioning
confidence: 99%
“…Defects in semiconductors can catch charge carriers and prevent photogenerated electron–hole pairs from recombining. 57 Iron disulfide has a band gap of 0.95 eV, which limits its electronic transition around the Fermi level and reduces its catalytic activity. 58 However, the s-vacancy can provide a carrier trap to improve the electronic interaction of iron disulfide electrode materials.…”
Section: Advanced Strategies For Improving the Performance Of Photo-a...mentioning
confidence: 99%