Defect engineering of hexagonal boron nitride nanosheets via hydrogen plasma irradiation

Xiao, Yuhan; Yu, Haiying; Wang, Hongyan; Zhu, Xiuling; Chen, Le; Gao, Wei; Liu, Caiyun; Yin, Haibo

doi:10.1016/j.apsusc.2022.153386

Cited by 9 publications

(3 citation statements)

References 44 publications

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“…The main strengths of hBN-based single-photon sources lie in their reliable emission from cryogenic temperatures up to 800 K, emission rates above 4 × 10 6 photons/s, strongly polarized emission, strain-tunable emission wavelength (Figure 5b), and Fourier-transform-limited emission at room temperature [169,[177][178][179][180]. The localized fabrication of emitters in hBN has been achieved so far with a variety of experimental methods [181], including thermal annealing [177], plasma treatment [182], femtosecond-pulsed laser [183,184], electron [177,185] and particle irradiations [186,187], and strain field engineering [179,188]. These results, in parallel with significant efforts to shed light on the structural nature of the discussed classes of emitters [189], indicate the readiness of the material for the scalable fabrication of arrays of quantum emitters.…”

Section: Nitridesmentioning

confidence: 99%

Solid-State Color Centers for Single-Photon Generation

Andrini,

Amanti,

Armani

et al. 2024

Photonics

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Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

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Section: Nitridesmentioning

confidence: 99%

Solid-State Color Centers for Single-Photon Generation

Andrini,

Amanti,

Armani

et al. 2024

Photonics

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“…With a bandgap of roughly 6 eV, 52 h-BN is predicted to host various defects with ground and excited states within the gap. 53 The calculated density of states (DOS) is presented in Fig. 1, where various energy states are introduced according to structures that represent V N , V B , V BN , V B3N vacancies, and zigzag edge configurations.…”

Section: Electronic Structures Of Clusters Representing Defected H-bn...mentioning

confidence: 99%

A DFT study of CO₂ electroreduction catalyzed by hexagonal boron-nitride nanosheets with vacancy defects

Sredojević,

Vukoje,

Trpkov

et al. 2024

Phys. Chem. Chem. Phys.

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“…In recent years, BN NSs have gained particular interest due to their good biocompatibility and excellent chemical, mechanical and thermal properties [5]. BN materials are already used in insulating substrates, multifunctional composite materials, optoelectronic nanodevices [6][7][8][9], etc. These also have lower cytotoxicity because of their chemical inertia, which explains their great potential in biomedical applications [10], despite their structural regulation and functional designs necessitating several toxic and corrosive chemicals.…”

Section: Introductionmentioning

confidence: 99%

The Influence of the Size of BN NSs on Silkworm Development and Tissue Microstructure

Andoh

Liu²,

Chen

et al. 2023

Nanomaterials

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Boron nitride nanosheets (BN NSs) have emerged as promising materials in a wide range of biomedical applications. Despite the extensive studies on these bio-nano interfacial systems, one critical concern is their toxicity, which is affected by a variety of factors, including size. This study aimed at assessing the relationship between BN NSs size and toxicity. Two silkworm strains (qiufeng × baiyu and Nistari 7019) were used as model organisms to investigate the effect of different sizes of BN NSs (BN NSs-1, thickness of 41.5 nm and diameter of 270.7 nm; BN NSs-2, thickness of 48.2 nm and diameter of 562.2 nm) on silkworm mortality, growth, cocoon weight, and tissue microstructure. The findings show that exposure to BN NSs in this work has no lethal adverse effects on silkworm growth or tissue microstructure. BN NSs have a higher effect on the growth rate of qiufeng × baiyu compared to Nistari 7019, demonstrating that the same treatment does not favorably affect the Nistari 7019 strain, as there is no significant increase in cocoon weight. Overall, the study suggests that the sizes of BN NSs employed in this study are relatively safe and have less negative impact on silkworms. This offers significant insights into the effect of BN NSs size, a crucial factor to consider for their safe use in biomedical applications.

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Defect engineering of hexagonal boron nitride nanosheets via hydrogen plasma irradiation

Cited by 9 publications

References 44 publications

Solid-State Color Centers for Single-Photon Generation

Solid-State Color Centers for Single-Photon Generation

A DFT study of CO₂ electroreduction catalyzed by hexagonal boron-nitride nanosheets with vacancy defects

The Influence of the Size of BN NSs on Silkworm Development and Tissue Microstructure

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Defect engineering of hexagonal boron nitride nanosheets via hydrogen plasma irradiation

Cited by 9 publications

References 44 publications

Solid-State Color Centers for Single-Photon Generation

Solid-State Color Centers for Single-Photon Generation

A DFT study of CO2 electroreduction catalyzed by hexagonal boron-nitride nanosheets with vacancy defects

The Influence of the Size of BN NSs on Silkworm Development and Tissue Microstructure

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A DFT study of CO₂ electroreduction catalyzed by hexagonal boron-nitride nanosheets with vacancy defects