Defect engineering of silicon with ion pulses from laser acceleration

Redjem, Walid; Amsellem, Ariel; Allen, Frances; Benndorf, G.; Ji, Bin; Bulanov, Stepan; Esarey, E.; Feldman, L. C.; Fernandez, J.; Garcia, Lopez, Javier; Geulig, Laura; Geddes, Cameron R.; Hijazi, Hussein; Ji, Qing; Иванов, В. Н.; Kanté, Boubacar; Gonsalves, A. J.; Meijer, Jan; Nakamura, Keisuke; Persaud, A.; Pong, Ian; Obst-Huebl, Lieselotte; Seidl, P.A.; Simoni, Jacopo; Schroeder, Carl; Steinke, S.; Tan, Liang Z.; Wunderlich, Ralf; Wynne, Brian; Schenkel, T.

doi:10.48550/arxiv.2203.13781

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such models are quite robust, in the sense that they may be easily applied to other color centers in silicon or other host materials, enabling the prediction of a wide range of desirable defects. Future work will focus on finding such defects that are also ground-state triplets while being thermodynamically stable, setting up the possibility of creating them through novel methods such as those demonstrated recently to reliably create G-and W-centers [28]. Alternatively, excited-state triplets may provide transient access to a hyperfine-coupled nuclear spin for a practical spin-photon interface.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Ivanov¹,

Simoni²,

Lee³

et al. 2022

Preprint

Self Cite

View full text Add to dashboard Cite

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication O-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-1/2 Tcenter are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here we employ ab initio density functional theory to characterize these defect centers, providing insight into the relaxed structures, bandstructures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is transformed from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the Dzz component of the zero-field splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect which sheds light on its potential application as a spin-photon interface.

show abstract

Section: Discussionmentioning

confidence: 99%

“…C (i) defects are relatively mobile at 300 K and can be formed by radiation damage displacing another C (s) or by direct injection [15]. The G-center emission peak is located at 969 meV, with a relatively narrow linewidth of a few meV depending on synthesis conditions [27][28][29].…”

Section: Electronic Structure Of the Defect Centersmentioning

confidence: 99%

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Ivanov¹,

Simoni²,

Lee³

et al. 2022

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing

et al. 2023

View full text Add to dashboard Cite

Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.

show abstract

Defect engineering of silicon with ion pulses from laser acceleration

Cited by 2 publications

References 0 publications

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing

Contact Info

Product

Resources

About