Defect engineering of ZnO: Review on oxygen and zinc vacancies

Gurylev, Vitaly; Perng, Tsong‐Pyng

doi:10.1016/j.jeurceramsoc.2021.03.031

Cited by 166 publications

(81 citation statements)

References 161 publications

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“…When the Ar plasma treatment was performed, the sheet resistance of the AZO thin film significantly decreased to approximately 2.45 kΩ sq −1 . In general, the generation of defects such as oxygen vacancies (for n-type) or metal vacancies (for p-type) in the oxide thin film generated free electrons or holes, which increased the conductivity of the oxide thin film [41][42][43]. Here, the decrease in the sheet resistance during the Ar plasma treatment may be due to the increase in simultaneous structural defects of the AZO thin film.…”

Section: Resultsmentioning

confidence: 99%

Tunable physical properties of Al-doped ZnO thin films by O₂ and Ar plasma treatments

Joo

Kim

2021

Mater. Res. Express

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Al-doped ZnO (AZO) is a promising transparent conducting oxide that can replace indium tin oxide (ITO) owing to its excellent flexibility and eco-friendly characteristics. However, it is difficult to immediately replace ITO with AZO because of the difference in their physical properties. Here, we study the changes in the physical properties of AZO thin films using Ar and O2 plasma treatments. Ar plasma treatment causes the changes in the surface and physical properties of the AZO thin film. The surface roughness of the AZO thin film decreases, the work function and bandgap slightly increase, and the sheet resistance significantly decreases. In contrast, a large work function change is observed in the AZO thin film treated with O2 plasma; however, the change in other characteristics is not significant. Therefore, the results indicate that post-treatment using plasma can accelerate the development of high-performance transparent devices.

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Section: Resultsmentioning

confidence: 99%

Tunable physical properties of Al-doped ZnO thin films by O₂ and Ar plasma treatments

Joo

Kim

2021

Mater. Res. Express

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“…However, photoelectric sensors based on ZnO still face some pressing problems, such as the high resistivity of ZnO, which leads to a low photocurrent and poor detection performance of the photoelectric sensor [ 98 ]. Moreover, the question of how to break through the limitation that the band gap of ZnO just corresponds to the ultraviolet band, which is a tough problem, needs to be solved.…”

Section: Research Progress Of Zno Nanosensormentioning

confidence: 99%

Progress in ZnO Nanosensors

Que

Lin

Sun

et al. 2021

Sensors

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Developing various nanosensors with superior performance for accurate and sensitive detection of some physical signals is essential for advances in electronic systems. Zinc oxide (ZnO) is a unique semiconductor material with wide bandgap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. ZnO nanostructures have been investigated extensively for possible use as high-performance sensors, due to their excellent optical, piezoelectric and electrochemical properties, as well as the large surface area. In this review, we primarily introduce the morphology and major synthetic methods of ZnO nanomaterials, with a brief discussion of the advantages and weaknesses of each method. Then, we mainly focus on the recent progress in ZnO nanosensors according to the functional classification, including pressure sensor, gas sensor, photoelectric sensor, biosensor and temperature sensor. We provide a comprehensive analysis of the research status and constraints for the development of ZnO nanosensor in each category. Finally, the challenges and future research directions of nanosensors based on ZnO are prospected and summarized. It is of profound significance to research ZnO nanosensors in depth, which will promote the development of artificial intelligence, medical and health, as well as industrial, production.

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“…There exist three basic consensuses for the roles played by V O in material behaviors. First, V O , possessing abundant localized electrons, generally acts as an electron donor 59 , 60 , 62 , 65 − 67 , 69 , 70 and manipulates the carrier density (bulk resistance) of semiconductor materials, 59 , 60 , 62 especially for n-type metal oxides. As interfacial defects, the electron-rich nature of oxygen vacancies will facilitate the adsorption of O 2 molecules and increase the content of chemisorbed oxygen species.…”

Section: Introductionmentioning

confidence: 99%

Visible Light-Induced Room-Temperature Formaldehyde Gas Sensor Based on Porous Three-Dimensional ZnO Nanorod Clusters with Rich Oxygen Vacancies

et al. 2022

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Oxygen vacancy (V O ) is a kind of primary point defect that extensively exists in semiconductor metal oxides (SMOs). Owing to some of its inherent qualities, an artificial manipulation of V O content in one material has evolved into a hot research field, which is deemed to be capable of modulating band structures and surface characteristics of SMOs. Specific to the gas-sensing area, V O engineering of sensing materials has become an effective means in enhancing sensor response and inducing light-enhanced sensing. In this work, a high-efficiency microwave hydrothermal treatment was utilized to prepare a V O -rich ZnO sample without additional reagents. The X-ray photoelectron spectroscopy test revealed a significant increase in V O proportion, which was from 9.21% in commercial ZnO to 36.27% in synthesized V O -rich ZnO possessing three-dimensional and air-permeable microstructures. The subsequent UV–vis–NIR absorption and photoluminescence spectroscopy indicated an extension absorption in the visible region and band gap reduction of V O -rich ZnO. It turned out that the V O -rich ZnO-based sensor exhibited a considerable response of 63% toward 1 ppm HCHO at room temperature (RT, 25 °C) under visible light irradiation. Particularly, the response/recovery time was only 32/20 s for 1 ppm HCHO and further shortened to 10/5 s for 10 ppm HCHO, which was an excellent performance and comparable to most sensors working at high temperatures. The results in this work strongly suggested the availability of V O engineering and also provided a meaningful candidate for researchers to develop high-performance RT sensors detecting volatile organic compounds.

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Defect engineering of ZnO: Review on oxygen and zinc vacancies

Cited by 166 publications

References 161 publications

Tunable physical properties of Al-doped ZnO thin films by O₂ and Ar plasma treatments

Tunable physical properties of Al-doped ZnO thin films by O₂ and Ar plasma treatments

Progress in ZnO Nanosensors

Visible Light-Induced Room-Temperature Formaldehyde Gas Sensor Based on Porous Three-Dimensional ZnO Nanorod Clusters with Rich Oxygen Vacancies

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Defect engineering of ZnO: Review on oxygen and zinc vacancies

Cited by 166 publications

References 161 publications

Tunable physical properties of Al-doped ZnO thin films by O2 and Ar plasma treatments

Tunable physical properties of Al-doped ZnO thin films by O2 and Ar plasma treatments

Progress in ZnO Nanosensors

Visible Light-Induced Room-Temperature Formaldehyde Gas Sensor Based on Porous Three-Dimensional ZnO Nanorod Clusters with Rich Oxygen Vacancies

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Product

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Tunable physical properties of Al-doped ZnO thin films by O₂ and Ar plasma treatments

Tunable physical properties of Al-doped ZnO thin films by O₂ and Ar plasma treatments