Defect formation observed by AES in a‐SiO<sub>2</sub> films prepared by photochemical vapour deposition

Nonaka, Hidehiko; Ichimura, Shingo; Arai, Kazuo; Gressus, C. Le

doi:10.1002/sia.740160190

Cited by 14 publications

(9 citation statements)

References 11 publications

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“…This result suggests that I contrast decreases faster for lower V irrad . It has been reported that energy dissipation near the surface is larger for lower V irrad [13,14]. It is therefore, suggested that the resistance change occurs near the surface of the NiO film, which is consistent with the V accel -dependence of the SEI contrast shown in Figs.…”

Section: Effect Of Eb Irradiation On C-afm Writing Areasupporting

confidence: 84%

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

2011

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Conductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory (ReRAM) by providing a wide area filled with filaments, which can be regarded as one filament with large radius. We observed a C-AFM writing area of NiO films using SEM, and revealed a correlation between the contrast in a secondary electron image (SEI) and the resistance written by C-AFM. In addition, the dependence of the SEI contrast on the beam accelerating voltage (V accel ) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effect of electron irradiation on the C-AFM writing area, it was shown that the resistance change effect was caused by exchanging oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low resistance and high resistance areas are, respectively, p-type Ni 1+δ O (δ < 0) and insulating (stoichiometric) or n-type Ni 1+δ O (δ 0).

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Section: Effect Of Eb Irradiation On C-afm Writing Areasupporting

confidence: 84%

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

2011

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“…In such a high-spatial resolution AES analysis, the irradiation of primary electrons with the high-current density is required. The irradiation of primary electrons with the high-current density induces the electron-induced damage of a sample surface, such as the reduction of metal oxides [1][2][3][4][5][6][7][8][9][10][11][12]. One of possible mechanisms of the electron-induced damage observed for ionic metal oxides is the Auger decay model investigated in detail by Feibelman and Knotek, in which the electron stimulated desorption of oxygen atoms and ions from the metallic oxide is understood as a result of the Auger decay after the ionization of inner-core level of metal and oxygen atoms [13].…”

Section: Introductionmentioning

confidence: 99%

Effects of Carbon Contaminations on Electron-Induced Damage of SiO<sub>2</sub> Film Surface at Different Electron Primary Energies

Nagatomi

Nakamura

Takai

et al. 2011

JSA

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Dependence of the electron-induced damage of the clean and carbon-contaminated SiO 2 film surfaces during the Auger electron spectroscopy measurement was investigated under irradiation of electrons at different primary energies. The variation in the intensity of the Si-LVV elemental peak with the increase in the electron dose was measured and analyzed within the scheme of the two-step decomposition model [J. Surf. Sci. Soc. Jpn. 25, 212 (2004) (in Japanese)]. The results clearly revealed that the rate of the decomposition of SiO 2 induced by the electron irradiation is decreased by a small amount of carbon contaminations of ~0.03 nm thickness on the SiO 2 surface. The effects of carbon contaminations on the reduction in the electron-induced degradation of SiO 2 is significant for the low-primary energy of electrons of 3 keV, and no effects were confirmed at the primary energy of 15 keV. These findings suggest that the primary energy dependence is attributed to the fact that interactions between primary electrons and atoms in the near surface region is much significant when primary electrons with the lower primary energy are irradiated.

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“…The changes in the Si peaks remain somewhat controversial because they have been variously attributed to the growth of Si microcrystals, 2 dangling Si bonds 3,4 and oxygen-deficient centers. 5 The onset for electron beam damage of ion-cleaned, thermally grown oxide has been observed at doses of <1 C cm 2 . 6 Oxygen losses of 20% have been reported after exposures of 80 C cm 2 at dose rates of 13 mA cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Artifacts in AES microanalysis for semiconductor applications

King

2000

Surf. Interface Anal.

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Auger electron spectroscopy analyses of submicron features on semiconductor surfaces are routinely accompanied by analytical artifacts such as sample degradation and background contributions arising from electron beam scattering. Submicron analyses are commonly carried out at electron beam densities in excess of 1 A cm −2 and are especially damaging to silicon oxides. The evolution of oxide reduction is observed both as a loss of oxygen versus beam exposure and in a complementary growth of Si LVV and Si KLL elemental peaks. The O KLL signal intensity from a 1 µm 2 area of thermally grown oxide is found to decrease by 22% after exposure to a rastered 20 kV/10 nA beam for 10 min. Another aspect of submicron analysis is the contribution to survey spectra that originates when surrounding material is excited by backscattered electrons. Background contributions may dominate AES spectra even when the sample is flat and the probing beam is smaller than the feature of interest. Tungsten damascene contacts provide a useful platform for investigating this phenomenon in the absence of topography. Spectra have been collected from tungsten contacts of various sizes and the target and background contributions quantified. When a 0.25 µm diameter tungsten contact is probed with a narrow 20 kV beam, the W MNN signal intensity is determined to be only 70% of that emitted from a large tungsten structure. Target signal reduction coincides with increased signal contributions from the surrounding oxide.

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Defect formation observed by AES in a‐SiO₂ films prepared by photochemical vapour deposition

Cited by 14 publications

References 11 publications

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

Effects of Carbon Contaminations on Electron-Induced Damage of SiO<sub>2</sub> Film Surface at Different Electron Primary Energies

Artifacts in AES microanalysis for semiconductor applications

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Defect formation observed by AES in a‐SiO2 films prepared by photochemical vapour deposition

Cited by 14 publications

References 11 publications

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

Effects of Carbon Contaminations on Electron-Induced Damage of SiO<sub>2</sub> Film Surface at Different Electron Primary Energies

Artifacts in AES microanalysis for semiconductor applications

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Defect formation observed by AES in a‐SiO₂ films prepared by photochemical vapour deposition