2022
DOI: 10.1039/d1tc05963g
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Defect healingviaa gradient cooling strategy for efficient all-inorganic perovskite solar cells

Abstract: All-inorganic perovskites have been considered to be ideal candidates for tandem and semitransparent solar cells. Nevertheless, their power conversion efficiencies (PCEs) are still limited by defects induced non-radiative recombination. In...

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Cited by 8 publications
(7 citation statements)
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“…13,18 Due to the ionic nature and low formation energy of perovskites, harmful defects are inevitably generated during the crystal growth and/or the post-treat process. 19,20 The abundant dangling bonds and mobile ions on the perovskite surface and/or grain boundaries will not only induce charge non-radiative recombination to cause the hysteresis effect, but also be easily invaded by the moisture and result in a phase transition. 21 The interfacial energy level mismatch, i.e.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…13,18 Due to the ionic nature and low formation energy of perovskites, harmful defects are inevitably generated during the crystal growth and/or the post-treat process. 19,20 The abundant dangling bonds and mobile ions on the perovskite surface and/or grain boundaries will not only induce charge non-radiative recombination to cause the hysteresis effect, but also be easily invaded by the moisture and result in a phase transition. 21 The interfacial energy level mismatch, i.e.…”
Section: Introductionmentioning
confidence: 99%
“…13,18 Due to the ionic nature and low formation energy of perovskites, harmful defects are inevitably generated during the crystal growth and/or the post-treat process. 19,20 The abundant dangling bonds and mobile ions on the perovskite surface and/or grain boundaries will not only induce charge non-radiative recombination to cause the hysteresis effect, but also be easily invaded by the moisture and result in a phase transition. 21 The interfacial energy level mismatch, i.e., large energy offset between the valence band maximum (VBM) of CsPbI 2 Br and the work function (W F ) of the carbon electrode, limits hole extraction at the perovskite/carbon interface, resulting in significant opencircuit voltage (V oc ) losses.…”
Section: Introductionmentioning
confidence: 99%
“…For the control device, the recombination resistance ( R rec ) is 1.64 kΩ (Table S3), and it is increased to 3.22 kΩ in the PAT device, demonstrating that the PAT process is beneficial for suppressing charge carrier recombination. To further explore the charge carrier transport across the interface, Mott–Schottky (M–S) plots of devices were measured and the built-in voltages ( V bi ) were extracted from the corresponding C –2 – V curves . It can be seen from Figure d that the PAT device shows a larger V bi (1.08 V vs 1.06 V) than the control device.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, several novel strategies have also been attempted to fabricate CsBX 3 , such as annealing process optimization, [37,130,[166][167][168][169] spray-coating process, [170,171] intermediate phase assisted sequential deposition, [172] gradient cooling process, [173] benign pinholes, [162] light-processing technology, [159] substrate optimization (moth-eye antireflector and muscovite), [174,175] fluxmediated crystal growth strategy, [176] drop-coating method, [177] halide exchange, [178] direct molecule substitution, [179] ambient environment fabrication, [117,180] phase transition induced method, [131] two-step infiltration-spinning method, [181] mist deposition method, [182] hybrid CVD (HCVD), [183] single-source electron beam evaporation, [183,184] UV-ozone post-treatment, [185] air blowing recipe, [186] two-step sintering (TSS) method, [133] electrodeposition, [187] hot-flow-assisted spin-coating approach, [39] intermolecular exchange strategy, [188] hot-pressing method, [189] and so on.…”
Section: Fabrication Technique Optimizationmentioning
confidence: 99%