Defect-impurity engineering in implanted silicon

Chelyadinskii, A. R.; Комаров, Ф. Ф.

doi:10.3367/ufnr.0173.200308b.0813

Cited by 14 publications

(8 citation statements)

References 260 publications

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“…The migration energy of oxygen dimers is 0.8 eV less than that of single oxygen atom [29]. Moreover, according to [28], Si-Si diinterstitials are more mobile than the single Si interstitial atoms. In [30,31], the values of migration energies of the interstitial atom and the vacancy are near 1 eV.…”

Section: Isothermal Annealing Of Si 〈Ge〉mentioning

confidence: 95%

“…As shown in [12], oxygen prevents the exit of Si interstitial atoms onto the crystal surface and, probably, is the centre of di-interstitial defect formation. In [28], it was supposed that under a high density of interstitial atoms in the matrix they organize Si-Si pairs. Such pairs are formed as a result of the stochastic location of two silicon atoms into the one interstitial space.…”

Section: Isothermal Annealing Of Si 〈Ge〉mentioning

confidence: 99%

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The radiation hardness of pulled silicon doped with germanium

Dolgolenko¹

2007

Semicond. phys. quantum electron. optoelectron.

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The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (N Ge = 2×10 20 cm −3) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier concentration on fluence was described in the framework of Gossick's corrected model. It was found that doping the germanium impurity resulted in increase of n-Si radiation hardness. The isothermal annealing of n-Si 〈Ge〉 after fluence 1.4×10 14 n o ⋅cm −2 was studied. It was shown that the annealing of defect clusters is caused by the annihilation of vacancy type defects in clusters with interstitial defects. For di-interstitial (Е 1 = 0.74 eV; ν 1 = 3.5×10 6 s −1), silicon interstitial atom (Е 2 = 0.91 eV; ν 2 = 7×10 6 s −1) and vacancy (Е V = 0.8 eV; ν = 1×10 7 s −1) the migration energies and frequency factors were determined. During the storage at room temperature, the behaviour of defect levels E c −0.17 eV and E c −0.078 eV was studied in the samples of Si (DOFZ) and Si 〈Ge〉, correspondingly.

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Section: Isothermal Annealing Of Si 〈Ge〉mentioning

confidence: 95%

Section: Isothermal Annealing Of Si 〈Ge〉mentioning

confidence: 99%

The radiation hardness of pulled silicon doped with germanium

Dolgolenko¹

2007

Semicond. phys. quantum electron. optoelectron.

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“…Часто при изготовлении полу-проводниковых структур в качестве техноло-гического средства для придания эпитаксиаль-ным слоям необходимых свойств их подверга-ют радиационному облучению или ионизацион-ному воздействию при ионной имплантации [1]. Радиационное воздействие и ионизирующее из-лучение также влияют на характеристики и па-раметры готовых полупроводниковых элемен-тов в процессе их эксплуатации [2].…”

Section: повышение раäиационной óстойчивости êремниевых моноêристаллиunclassified

Increasing the radiation resistance of single-crystal silicon epitaxial layers

et al. 2014

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The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4). Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc.).

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“…In [4,12] it is concluded that the formation of residual extended defects in silicon needs an dose "threshold". This means that such structural disorder during heat treatment (at least 700°C) arises only if a critical concentration of point defects has accumulated.…”

Section: Introductionmentioning

confidence: 99%

Ion Implantation as a Tool for Controlled Modification of Photoelectrical Properties of Silicon

Khuchua¹,

Tigishvili²,

Dolidze³

et al. 2018

Ion Beam Applications

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The results of our recent studies of controlled modifications of the photoelectrical properties of n-Si due to B + ion implantation are supplemented with new data, summarized and analyzed. The starting material was wafers of single-crystalline n-Si and a silicon-on-insulator structures. p-n-Si structures were fabricated by ion implantation of B + in doses ranging from 1 × 10 13 to 1 × 10 15 сm −2 and ion acceleration energies of 50 and 32 keV. Subsequent annealing was performed both by steady-state (900 and 1000°C, 20 min) and pulsed photon processing. In such structures, a pronounced photosensitivity is observed in the shortwave infrared range (1.5-2.2 μm), as well as in the ultraviolet region within 0.25-0.40 μm. A well-defined correlation between the structural, electrical and photoelectrical properties and the implantation and annealing regimes, as well as the content of C and O impurities is demonstrated. In the starting material, a damaged layer with a thickness of hundreds of nanometers was found to have a significant effect on the results obtained. The main results are discussed in terms of the formation/transformation of deep-level extended defects in n-Si during B + implantation followed by annealing. Innovative application approaches of the technology are obvious.

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Defect-impurity engineering in implanted silicon

Cited by 14 publications

References 260 publications

The radiation hardness of pulled silicon doped with germanium

The radiation hardness of pulled silicon doped with germanium

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Ion Implantation as a Tool for Controlled Modification of Photoelectrical Properties of Silicon

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