Defect-Induced Exchange Bias in a Single SrRuO₃ Layer

Abstract

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering

“…We attribute the origin of THE to defect engineering by ion irradiation, which breaks the bulk inversion symmetry through altering oxygen octahedral rotation and thus produces DMI in thick SRO films. [ 16–19 ]…”

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

“…Here, we use helium (He) ion irradiation to induce "strain doping" in SVO films. Strain doping by irradiation of noble He atoms results in an uniaxial lattice expansion along the out-of-plane direction without changing the in-plane lattice constants [23][24][25]. For instance, Gao et al reported that the out-of-plane lattice parameter in epitaxial La 0.7 Sr 0.3 MnO 3 thin films is continuously and independently manipulated by using He ion irradiation [23].…”

Exchange bias in Sm$ _{2} $NiMnO$ _{6}$/BaTiO$ _{3}$ ferromagnetic-diamagnetic heterostructure thin films

“…Polarization dependent X-ray absorption measurements, duly combined with configuration interaction simulations suggest charge transfer from Ni/Mn 3d to Ti 3d orbitals through O 2p orbitals across the SNMO/BTO (SB) interfaces, which can induce magnetism in the BTO spacer layer. The observed exchange bias in SBS heterostructures is discussed considering the pinning of moments due to exchange coupling at SB (or BTO/SNMO) sandwich interface.The exchange bias (EB) phenomenon, described as the shift of isothermal magnetic hyteresis loop in the magnetic field scale, is attributed to unidirectional anisotropy effect [1,2].Ideally an antiferromagnetic (AFM) system possess equivalent energies for the two oppositely aligned magnetic sublattices. Now, the EB effect can be understood considering the exchange coupling of any one AFM sublattice spins with adjacent ferromagnetic (FM) spin arrangements, when the FM/AFM interface system (FM T C > AFM T N…”

“…The exchange bias (EB) phenomenon, described as the shift of isothermal magnetic hyteresis loop in the magnetic field scale, is attributed to unidirectional anisotropy effect [1,2].…”