2011
DOI: 10.1103/physrevb.83.161201
|View full text |Cite
|
Sign up to set email alerts
|

Defect-induced magnetism in chemically synthesized nanoscale sheets of MgO

Abstract: Highly defective MgO nanosheets were prepared by a colloidal synthesis and exhibited low-temperature ferromagnetism which was significantly larger that the magnetization potentially obtainable from the low transition-metal impurity concentration. Electron paramagnetic resonance experiments confirmed that the magnetization did not significantly involve impurities and that the nanosheets consisted of strongly interacting spin clusters which disappeared upon high-temperature annealing. These spins were concentrat… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

2
34
0

Year Published

2011
2011
2024
2024

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 74 publications
(36 citation statements)
references
References 36 publications
2
34
0
Order By: Relevance
“…Moreover, electrical switching that has been observed in MgO films [13] and MgO-based magnetic tunnel junctions [14][15][16] is attributed either to nanostructural rearrangements of metallic ions in the electrode/barrier interfaces or reversible displacement of oxygen vacancies. On the other hand, defect-induced ferromagnetism in MgO has already been observed at room temperature [17][18][19][20][21]. Our previous results demonstrate that the presence of cation vacancies has a strong impact on the electronic properties of MgO.…”
Section: Introductionmentioning
confidence: 83%
“…Moreover, electrical switching that has been observed in MgO films [13] and MgO-based magnetic tunnel junctions [14][15][16] is attributed either to nanostructural rearrangements of metallic ions in the electrode/barrier interfaces or reversible displacement of oxygen vacancies. On the other hand, defect-induced ferromagnetism in MgO has already been observed at room temperature [17][18][19][20][21]. Our previous results demonstrate that the presence of cation vacancies has a strong impact on the electronic properties of MgO.…”
Section: Introductionmentioning
confidence: 83%
“…In the case of the triplet state, however, the <S 2 > values are ~3.02 and ~2.05 before and after annihilation of the first spin contaminant, respectively [29]. This indicates that the calculation for the triplet state is 8 affected by mixing with a higher spin (possibly quintet) state. Figures 3(a)-3(c) …”
mentioning
confidence: 99%
“…9 It was assumed that vacuum annealing results in creation of oxygen vacancies, which subsequently reduces magnetic moments and, therefore, the observed RTFM spin-order was perceived as induced by magnesium vacancies. Recently, Maoz et al 10,11 noticed that air annealing too reduced magnetic spin-order in MgO nano-sheets and suggested one electron trapped oxygen vacancies (F þ ) to cause the observed ferromagnetic spin-order. Very recently, Wang et al 12 exhibited invariable magnetic moments when annealing in air was performed below 1000 C. Further, Balcells et al 13 observed vacuum annealing of five months air exposed MgO thin films at 850 C to reveal enhanced magnetic moments.…”
mentioning
confidence: 99%