Defect localization using photon emission microscopy analysis with the combination of OBIRCH analysis

Wu, Chunxia; Zhai, Linda; Wang, Winter; Song, Grace; Li, Jinglong; Joe, Yu; Motohiko, Masuda

doi:10.1109/ipfa.2010.5532247

Cited by 18 publications

(3 citation statements)

References 2 publications

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“…PEM Basics Photon Emission Microscopy (PEM) is very helpful for locating some types of defect, which emit light, such as junction leakage, hot electrons (saturated transistors), latch-up, junction avalanche, saturated CMOS and bipolar transistors [2].…”

Section: A)mentioning

confidence: 99%

Application of PEM and OBIRCH to Defect Localization of Integrated Circuits

Lian

Lin²,

Yao

2014

AMR

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With the increasing integration and complexity of microelectronic devices, fault isolation has been challenged. Photon Emission Microscopy (PEM) and Optical Beam Induced Resistance Change (OBIRCH) are effective tools for defect localization and fault characterization in failure analysis. In this paper, the principles and different application condition of PEM and OBIRCH are discussed. PEM is very helpful for locating defects emitting photon, but can not detect the defects which have no photon emitting, such as shorted metal interconnects; OBIRCH as a complementary, has a high success rate for locating resistance defects. Two cases with failure mechanisms illuminated are presented to show the different application of PEM and OBIRCH.

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Section: A)mentioning

confidence: 99%

Application of PEM and OBIRCH to Defect Localization of Integrated Circuits

Lian

Lin²,

Yao

2014

AMR

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“…PEM is a well-known method of localizing faults in integrated circuits, which is still in development for the defect localization [9]. PEM is based on hot electron emission, which is the intrinsic nature of transistors when current is flowing, and thus is non-invasive and does not alter the electrical properties of the DUT.…”

Section: Photon Emission Microscopy (Pem)mentioning

confidence: 99%

Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

Kim¹,

Lee²,

Lee³

et al. 2011

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, we have proposed a new approach for optical failure analysis which employs a CMOS photon-emitting circuitry, consisting of a flipflop based on a sense amplifier and a photon-emitting device. This method can be used even with deepsubmicron processes where conventional optical failure analyses are difficult to use due to the low sensitivity in the near infrared (NIR) region of the spectrum. The effectiveness of our approach has been proved by the failure analysis of a prototype designed and fabricated in 0.18 μm CMOS process.Index Terms-Circuit testing, deep submicron CMOS technology, failure analysis, photon emission, picosecond imaging circuit analysis (PICA)

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“…Infrared Optical Beam Induced Resistance Change (IR-OBIRCH) [1,2] is a non-destructive, fast tool for locating a defect from the front side and backside of an IC. This technique can directly pinpoint defect locations prior to destructive physical analysis sometimes.…”

Section: Introductionmentioning

confidence: 99%

Lock-in IR-OBIRCH assisted with current detection probe head extend its application to high voltage high current failure analysis

Wu¹,

Liu²,

Wu³

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Lock-in IR-OBIRCH analysis is very effective for defect localization in failure analysis. However, there are some cases that only have failures under high voltage and high current condition, which limits the application of Lock-in IR-OBIRCH as it only supply maximal 25V voltage and 100mA current. Current Detection Probe Head extend its capability that can supply maximal 250V voltage and 6.3A current, which supply a good solution about defect localization for high voltage and high current failure mode.

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Defect localization using photon emission microscopy analysis with the combination of OBIRCH analysis

Cited by 18 publications

References 2 publications

Application of PEM and OBIRCH to Defect Localization of Integrated Circuits

Application of PEM and OBIRCH to Defect Localization of Integrated Circuits

Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

Lock-in IR-OBIRCH assisted with current detection probe head extend its application to high voltage high current failure analysis

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