Defect luminescence and lattice strain in Mn2+ doped ZnGa2O4

Somasundaram, K.; Abhilash, K.P.; Sudarsan, V.; Selvin, P. Christopher; Kadam, R.M.

doi:10.1016/j.physb.2016.03.022

Cited by 35 publications

(15 citation statements)

References 29 publications

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“…of the depositing films/substrate. After the sample was annealed at 900 • C, a positive slope was observed, which indicates the existence of tensile strain in the lattice ( Figure 2f) [25].…”

Section: Resultsmentioning

confidence: 97%

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

et al. 2019

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Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.

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Section: Resultsmentioning

confidence: 97%

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

et al. 2019

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“…• and Zn Ga ′ antisite defects, which make ZnGa 2 O 4 to be a suitable host for persistent luminescence, as also for ZnGa 2 O 4 doped with Cr 3+ , 20,21 Mn 2+ , 22 or Bi 3+ . 23 The inverse cubic spinel (space group Fd3̅ m) Zn 2 GeO 4 has ZnO 4 and (Ge,Zn)-O 6 units, 24 whereas the tetragonal spinel (P4 3 ZnO 6 , and GeO 6 units.…”

Section: Introductionmentioning

confidence: 99%

“…22 Various emission bands of GeO 2 and Ge 2 O 3 have been reported between 500 and 580 nm at room temperature to 80 K. 37−41 The focus of most studies employing ZGGO has been the luminescence of this material doped with metal ions such as Cr 3+ 42−44 or Mn 2+ . 22,29,45 The most detailed previous study of the luminescence of Zn 1+x Ga 2−2x Ge x O 4 30 (0 ≤ x ≤ 1: x = 0, ZnGa 2 O 4 ; x = 1, Zn 2 GeO 4 ) employed samples that gave broad luminescent bands with maxima between 440 and 482 nm and average emission lifetimes in the range 13−21 ns. The luminescence was found to be enhanced with the replacement of Ga 3+ by Ge 4+ due to radiative donor (e.g., V O…”

Section: Introductionmentioning

confidence: 99%

“…The AM 2 O 4 -type structure of ZnGa 2 O 4 has two octahedrally coordinated Ga 3+ ions (M) for each tetrahedrally coordinated Zn 2+ (A) ion. The spinel structure is well-known to exhibit inversion phenomena: with ∼3% of Zn 2+ ions at Ga 3+ sites and vice versa, thereby producing two distinct ,, Ga Zn • and Zn Ga ′ antisite defects, which make ZnGa 2 O 4 to be a suitable host for persistent luminescence, as also for ZnGa 2 O 4 doped with Cr 3+ , , Mn 2+ , or Bi 3+ . The inverse cubic spinel (space group Fd 3̅ m ) Zn 2 GeO 4 has ZnO 4 and (Ge,Zn)O 6 units, whereas the tetragonal spinel ( P 4 3 22) has ZnO 4 , ZnO 6 , and GeO 6 units .…”

Section: Introductionmentioning

confidence: 99%

“…Under ultraviolet excitation, ZnGa 2 O 4 synthesized by the solid state method, pulsed laser deposition, nanowire arrays, or nanoparticles from a solution method give a broad band centered at 430–490 nm, with lifetime in the nanoseconds range, and the maximum of the excitation spectrum at 256–280 nm. The “reduced” form of ZnGa 2 O 4 exhibits two bands near 360 nm .…”

Section: Introductionmentioning

confidence: 99%

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Tunable Dual Visible and Near-Infrared Persistent Luminescence in Doped Zinc Gallogermanate Nanoparticles for Simultaneous Photosensitization and Bioimaging

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et al. 2020

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Zinc gallogermanate nanoparticles have been synthesized by a sol− gel process with adjustment of Zn 2+ , Ga 3+ , and Ge 4+ ratios and subsequent sintering at 1000 °C. The resulting X-ray diffractograms can be simulated by variation of the ratios α, β, and γ in the standard cards of αZnGa 2 O 4 −βZn 2 GeO 4 −γGeO 2 . Similarly, the FT-IR and Raman vibrational spectra are sums of the spectra of the individual components. The major difference in our synthesis of the ratio α:β:γ = 1:1:1 compound, ZGGO, from previous studies is the contribution of Zn 2 GeO 4 in the rhombohedral lattice system and not the cubic phase. Photoluminescence and electron spin resonance spectra supply sensitive analyses of our samples and show the presence of zinc and oxygen vacancies, with the latter playing an important role in emission. In particular, a tunable visible emission band is discovered which can be deconvoluted into several Gaussian components. The lowest energy band, at ∼520 nm, gives the strongest persistent luminescence, and it is tunable by adjusting the ionic ratios in the samples. The persistent luminescence decay can be fitted by biexponential functions with five free parameters, but the normalized persistent luminescence decay can also be fitted by a hyperbolic function with one free parameter, representing an average rate constant. This implies a fairly unimodal distribution of trap−acceptor distances and/or orientations. The rate constant decreases with measurement time because deeper traps are being emptied. The fitted average rate constants, when monitoring persistent luminescence at different energies, display the persistent luminescence spectrum. Doping the zinc gallogermanates with chromium enables the relative intensity of green/NIR persistent luminescence bands to be tuned by adjusting the Cr 3+ content. A potential application of the dual persistent luminescence is in simultaneous photosensitization and bioimaging.

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Transition Metal Doped Smart Glass with Pressure and Temperature Sensitive Luminescence

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The development of future transparent intelligent systems demands smart glass with multifunctional sensing capabilities. Here, the realization of a smart glass with dual temperature and pressure sensing function by using Mn2+‐doped nanostructured gallate glass for the first time is reported. The material exhibits exceptional temperature response in the range of 323–523 K and the maximal relative temperature sensitivity reaches as high as 2.51% K−1 at 523 K. The material is also sensitive to the pressure fluctuation and displays bright green pressure‐induced luminescence. A combination of structural and optical analysis and theoretical calculation reveals that the local dopant orientation in nanodomain inside glass contributes to the previously unrealized sensing behavior. The critical factors governing the sensing performance are identified and the cooperative effects between the local chemical bonding and domain size contribute greatly to the remarkable enhancement of the sensitivity. The results highlight that the precise control over the doping process offers a great opportunity to design new smart glass.

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Defect luminescence and lattice strain in Mn2+ doped ZnGa2O4

Cited by 35 publications

References 29 publications

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

Tunable Dual Visible and Near-Infrared Persistent Luminescence in Doped Zinc Gallogermanate Nanoparticles for Simultaneous Photosensitization and Bioimaging

Transition Metal Doped Smart Glass with Pressure and Temperature Sensitive Luminescence

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