2021
DOI: 10.1021/acs.jpclett.1c01203
|View full text |Cite
|
Sign up to set email alerts
|

Defect-Mediated Slow Carrier Recombination and Broad Photoluminescence in Non-Metal-Doped ZnIn2S4 Nanosheets for Enhanced Photocatalytic Activity

Abstract: Elemental doping has already been established to be one of the most effective approaches for band-gap engineering and controlled material response for improved photocatalytic activity. Herein atomically thin ZnIn2S4 (ZIS) nanosheets were doped with O and N separately, and the effects of doping were spectroscopically investigated for photocatalytic H2 evolution. Steady-state photoluminescence studies revealed an enhanced charge-carrier population in the doped systems along with a defect-state-induced broad peak… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

4
43
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 45 publications
(47 citation statements)
references
References 37 publications
4
43
0
Order By: Relevance
“…In Figure c-iv, the HRTEM image of CN displays the lattice fringes of 0.32 nm spacing, which matches with the interplanar distance of the (002) plane (Figure a). Figure c-ii shows the morphology of ZIS flakes which are in good agreement with earlier reports , Figure c-v represents the HRTEM image of pristine ZIS. The distance between lattice fringes are found to be 0.41 nm which matches with diffraction from the (006) planes of hexagonal ZIS.…”
supporting
confidence: 90%
See 4 more Smart Citations
“…In Figure c-iv, the HRTEM image of CN displays the lattice fringes of 0.32 nm spacing, which matches with the interplanar distance of the (002) plane (Figure a). Figure c-ii shows the morphology of ZIS flakes which are in good agreement with earlier reports , Figure c-v represents the HRTEM image of pristine ZIS. The distance between lattice fringes are found to be 0.41 nm which matches with diffraction from the (006) planes of hexagonal ZIS.…”
supporting
confidence: 90%
“…This excitonic feature must be originating from the involvement of the higher order excited states in the conduction regime of CN. We observed similar observations in the TA study of ZIS earlier . Next, to understand the exciton relaxation mechanism, the HSE and BSE states are monitored by probing at 392 and 450 nm shown in Figure b, and the kinetics traces are fitted with multiexponential functions and are listed in the Supporting Information (Table S2).…”
supporting
confidence: 70%
See 3 more Smart Citations