Defect microstructure in heavy-ion-bombarded (0 0 0 1) ZnO

Myers, Michael T.; Charnvanichborikarn, Supakit; Wei, Chao-Chen; Luo, Zhiping; Aitkaliyeva, Assel; Shao, Lin; Kucheyev, S. O.

doi:10.1016/j.actamat.2012.07.046

Cited by 19 publications

(24 citation statements)

References 25 publications

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“…The IP depth location depends on the ion mass, implanted ion fluence, and treatment conditions . Typically, it is located below 25 nm from the surface . As the depth resolution of our RBS/c measurements is about 10 nm, the IP, located in the region of energy 1300–1320 keV, cannot be separated from the surface peak, which can be found in the region 1320–1340 keV.…”

Section: Resultsmentioning

confidence: 91%

Luminescence in the Visible Region from Annealed Thin ALD‐ZnO Films Implanted with Different Rare Earth Ions

Ratajczak

Guziewicz

Prucnal

et al. 2018

Physica Status Solidi (a)

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Epitaxial ZnO thin films grown by atomic layer deposition on GaN/Al2O3 substrates are implanted with Yb, Dy, and Pr ions to a fluence of 5 × 1014 at cm−2 and subsequently anneals at 800 °C using a rapid thermal annealing (RTA) system. Structural properties of implanted and annealed ZnO films and the optical response are evaluated by channeling Rutherford backscattering (RBS/c) and photoluminescence spectroscopy (PL), respectively. RTA leads to a partial removal of the post‐implantation defects with simultaneous native defects transformation and optical activation of RE ions. It is found that two groups of defects: defects formed during implantation process and native defects, play an important role in the luminescence in the visible region. The room temperature PL spectra obtained from annealed ZnO:RE films do not show sharp PL lines from transitions within the RE 4f shell, but show near band gap emission and defect related emission, which energy emission is controlled by the RE atoms. It suggests a presence of RE‐related complexes that are formed during high‐temperature annealing in oxygen atmosphere. The excitonic and defect emission modified by RE ions create an optical response of the system resulting in a specific color of the emitted light.

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Section: Resultsmentioning

confidence: 91%

Luminescence in the Visible Region from Annealed Thin ALD‐ZnO Films Implanted with Different Rare Earth Ions

Ratajczak

Guziewicz

Prucnal

et al. 2018

Physica Status Solidi (a)

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“…As a result, radiation generated defects are mobile at RT and high-dose irradiation with heavy ions does not render ZnO amorphous at RT. Ion-beam-produced disorder has been intensively investigated in ZnO [2][3][4][5][6][7][8][9][10][11][12]. For a wide range of irradiation conditions, the level of stable post-implantation disorder in the ZnO crystal bulk depends linearly on the concentration of ballistically generated lattice displacements [4][5][6].…”

Section: Dynamic Annealing In Znomentioning

confidence: 99%

“…In particular, an anomalous intermediate defect peak (IP) has been observed in depth profiles of Rev. 1.2 lattice disorder in (0001) ZnO irradiated with heavy or cluster ions and measured by high-resolution Rutherford backscattering and channeling (RBS/C) [4,6,[11][12][13].…”

Section: Dynamic Annealing In Znomentioning

confidence: 99%

“…RBS/C spectrometry [4,6,[11][12][13]. The IP clearly originates at the sample surface (via an unknown mechanism) and moves deeper into the crystal bulk with increasing ion fluence.…”

Section: The Role Of the Surface In Heavy-ion-bombarded Zno †mentioning

confidence: 99%

“…For irradiation with 500 keV Xe ions, the IP position saturates at depths of ∼ 40 − 50 nm independent of the projected ion range and is strongly correlated to the (0001) free surface. [11,12] The IP has been shown to be associated with a Zn-rich region which is preceded by nanoscale cavities and results in substantial microstructural changes [11,12].…”

Section: The Role Of the Surface In Heavy-ion-bombarded Zno †mentioning

confidence: 99%

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Toward understanding dynamic annealing processes in irradiated ceramics

Myers¹

2013

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High energy particle irradiation inevitably generates defects in solids. The ballistic formation and thermalization of the defect creation process occur rapidly, and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is Rev. 1.2

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