Defect physics of ternary chalcopyrite semiconductors

Márquez, R.; Rincón, C.

doi:10.1016/s0167-577x(99)00050-6

Cited by 45 publications

(26 citation statements)

References 14 publications

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“…Its activation energy according to Eq. (1) is 30 meV, which is in good coherence with the theoretical activation energy of a donor level at 26 meV [4]. Its possible physical origin is a telluride vacancy Te V • or an antisite defect Cu In…”

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confidence: 77%

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Deep and edge photoluminescence emission of CuInTe₂

Jagomägi¹,

Krustok

Raudoja

et al. 2003

Physica Status Solidi (b)

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PACS 61.72. Ji, 71.55.Ht, 78.55.Hx Photoluminescence studies of chalcopyrite CuInTe 2 were conducted. Three edge (1.041 eV, 1.030 eV, and 1.019 eV) and two deep level (0.999 eV and 0.957 eV) emission bands were observed at 11 K. The excitation intensity dependence of PL spectra was recorded. As possible band sources one excitonic and four band-to-defect recombination mechanisms are proposed in this paper.CuInTe 2 (CIT) and other chalcopyrite ternary crystals have recently attracted worldwide interest because of their optimal bandgap (about 1 eV) for photovoltaic conversion devices. Also, they provide high conversion efficiencies at relatively low expense.Photoluminescence (PL) is an easy-to-use and sensitive probe of defect levels inside forbidden band. However, the most interesting and challenging part is the interpretation of the experimental spectra.In the present paper we discuss the photoluminescence spectrum of chalcopyrite CuInTe 2 . Previously, Rincón et al. have studied the photoluminescence of CIT crystals in Refs. [1,2]. In these papers edge and excitonic PL radiation was presented. In addition, we report also the radiative emission of deep recombination centres.The CuInTe 2 powder samples were synthesised from the elements at 810 °C in fused quartz ampoules. The treatment continued with homogenising annealing at 665 °C, which is slightly lower than the peritectic temperature in CuInTe 2 [3]. The starting Cu/In concentration ratio was 1.03. The final polycrystalline CuInTe 2 ingot showed a well-defined chalcopyrite pattern in the XRD scan.The sample was cooled inside a closed-cycle He cryostat (T = 8-300 K) and excited with a 441 nm He-Cd laser with maximum output power 40 mW. The PL signal was recorded by using standard lock-in technique, computer-controlled SPM-2 grating monochromator (f = 40 cm) and InGaAs detector. The detected signal was corrected in conformity with grating efficiency and detector sensitivity spectra.The experimental PL spectrum of a CIT sample at 11 K is presented in Fig. 1. We distinguished five different PL bands -three near the band-edge bands (E 1 , E 2 , and E 3 ) and two deep bands (D 1 and D 2 ) with their phonon replicas. We found that the replicas appear according to the LO-phonon energy ħω LO = 23.2 meV. The corresponding peak positions and the possible band origins are presented in Table 1. The results were compared with theoretical calculations of defect levels in CIT [4], where the model of effective mass theory was applied.We identified that three types of recombination mechanisms governed our bands: excitonic, donor to valence band, and conduction band to acceptor emission. It is known that shallow levels, because of the

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confidence: 77%

“…The corresponding peak positions and the possible band origins are presented in Table 1. The results were compared with theoretical calculations of defect levels in CIT [4], where the model of effective mass theory was applied.…”

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confidence: 99%

Deep and edge photoluminescence emission of CuInTe₂

Jagomägi¹,

Krustok

Raudoja

et al. 2003

Physica Status Solidi (b)

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“…19,20 The model predicted that if the activation energy of the single acceptor level is set to be E, the first and second activation energies of the double acceptor levels will be 1.7E and 4.0E; the first, second, and third activation energies of the triple acceptor levels will be 2.5E, 5.5E, and 9.0E. The acceptor level at 0.14 eV obtained from PL measurements, the levels at 0.59 and 0.67 eV from DLTS measurements might be the acceptor levels of E, 4.0E, and 5.5E; however, further investigation using double correlated DLTS ͑DDLTS͒ methods are necessary to clarify the charge states of the acceptor levels.…”

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confidence: 99%

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Cui

Caudel

Bhattacharya

et al. 2009

Journal of Applied Physics

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Deep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy ͑DLTS͒. Three deep levels at 0.40, 0.59, and 0.67 eV above the valence band were found in undoped GaTe crystals. The level at 0.40 eV is associated with the complex consisting of gallium vacancy and gallium interstitial ͑V Ga -Ga i ͒, the level at 0.59 eV is identified as the tellurium-on-gallium antisite ͑Te Ga ͒, and the last one is tentatively assigned to be the doubly ionized gallium vacancy ͑V Ga ‫ء‬ ͒. Indium isoelectronic doping is found to have noticeable impacts on reducing the Schottky saturation current and suppressing the densities of Te Ga and V Ga ‫ء‬ defects. The peak which dominated the DLTS spectrum of GaTe:In is assigned to be the defect complex consisting of V Ga and indium interstitial ͑In i ͒. Low-temperature photoluminescence ͑PL͒ spectroscopy measurements were performed on GaTe and GaTe:In crystals. A shallow acceptor level at 140 meV corresponding to V Ga was measured in undoped GaTe. Two shallow acceptor levels at 123 and 74 meV corresponding to V Ga and indium-on-gallium antisite In Ga were observed in GaTe:In samples. The PL results suggested that the indium atoms could occupy gallium vacant sites during GaTe crystal growth period and thereby change the electrical and optical properties of GaTe crystal.

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“…3 is attributed to a transition of the 18.5 meV donor to the 108.9 meV acceptor. All of these defect levels were calculated by R. Marquez et al 24 within the permitted error, although the values were slightly different. The candidates for the 13.8 meV and 18.5 meV donor defect are predicted to be silver interstitial (Ag i ), gallium antisite (Ga Ag ), or selenium vacancy (V Se ).…”

Section: Defects Involved In the Observed Transitionsmentioning

confidence: 95%

Characterization of radiative recombination in Ag(In,Ga)Se2 thin films by photoluminescence

Zhang

Liu

2016

AIP Advances

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A detailed analysis of the radiative recombination processes in Ag(InGa)Se2 thin films grown by a three-stage method was carried out by photoluminescence. The temperature and excitation dependence of the photoluminescence spectra was used to identify the recombination types and determine the ionization energy of the defects in the films. Significant differences were observed between the spectra of the Ag-rich and Ag-poor samples. The Ag-rich films were dominated by two emission peaks of donor acceptor pairs (DAPs). The DAP at lower energy level is attributed to recombination of donor level 13.8 meV (Agi) with acceptor level 70.3 meV (AgIn), while the one at high energy level is assigned to recombination of donor level 18.5 meV (Agi) with acceptor level 108.9 (AgSe). When Ag/III atomic ratio was near 2.00, a phonon related-structure began to appear, which is attributed to the phonon replica of the high energy level DAP. In the case of Ag-poor AIGS samples, the dominant broad asymmetric peaks of AIGS films with different Ag/III atomic ratios were related to potential fluctuation at low temperature, and the compensation level decreased with increasing Ag/III atomic ratio. The emission line was assigned to recombination of donor level 12.7 meV (Agi) with acceptor level 175 meV (AgGa2). When the excitation power and temperature were increased, new free-bound and DAP emission lines began to appear. The free-bound was assigned to the transition from the conduction band to an acceptor level of 80 meV (AgIn). The DAP was assigned to recombination of donor level 20 meV (VSe) with acceptor level 145 meV (AgGa).

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Defect physics of ternary chalcopyrite semiconductors

Cited by 45 publications

References 14 publications

Deep and edge photoluminescence emission of CuInTe₂

Deep and edge photoluminescence emission of CuInTe₂

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Characterization of radiative recombination in Ag(In,Ga)Se2 thin films by photoluminescence

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Defect physics of ternary chalcopyrite semiconductors

Cited by 45 publications

References 14 publications

Deep and edge photoluminescence emission of CuInTe2

Deep and edge photoluminescence emission of CuInTe2

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Characterization of radiative recombination in Ag(In,Ga)Se2 thin films by photoluminescence

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Deep and edge photoluminescence emission of CuInTe₂

Deep and edge photoluminescence emission of CuInTe₂