Defect profiles in semiconductor structures

Abstract

Variable-energy positron annihilation spectroscopy (VEPAS) has found applications in structural and electronic analysis of thin films and near-surface layers, nanoporous materials, ion implantation, silicon photonics, and vacancy engineering. In all this applied work it is essential that VEPAS is treated as a normal member of the arsenal of spectroscopies available to the semiconductor research community. Examples are presented of how useful insights into current problems in semiconductor physics and technology have been gained by combinations of VEPAS and other techniques such as secondary ion mass spectrometry, transmission electron microscopy, electrical characterization, and optical techniques such as photoluminescence and optically-detected magnetic resonance.