Defect Properties in Plastically Deformed p-GaAs Studied by Positron Lifetime Measurements

a b s t r a c tBased on the first-principles calculations, we perform an initiatory statistical assessment on the reliability level of theoretical positron lifetime of bulk material. We found the original generalized gradient approximation (GGA) form of the enhancement factor and correlation potentials overestimates the effect of the gradient factor. Furthermore, an excellent agreement between model and data with the difference being the noise level of the data is found in this work. In addition, we suggest a new GGA form of the correlation scheme which gives the best performance. This work demonstrates that a brand-new reliability level is achieved for the theoretical prediction on positron lifetime of bulk material and the accuracy of the best theoretical scheme can be independent on the type of materials.

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Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra

Wang

Chen

2000

Chinese Phys. Lett.

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Positron lifetime spectra were measured for the Zn-doped p-type GaAs. In comparing the horizontal-Bridgmanmethod-grown and the A oating-zone-method grown p-type GaAs with the liquid-encapsulation-Czochralski-grown p-type GaAs samples, positron trapping into vacancy type defects was observed in the former two grown p-type GaAs. Shallow positron traps were detected, and the dominant ones were attributed t o acceptor the in p-type GaAs.P A C 3 78. 70. Bj Positron lifetime spectroscopy, which is directly sensitive to vacancy-type defects, is an established method for studying the defect in semiconductor.' Up to now, many works have been reported on ntype GaAs by and semi-insulating (SI)-type GaAs by using this technique and it has been proved to be s u c ~e s s f u l . ~-~ However, much less studies concerned about the p-type materials has been done. There is a discrepancy on positron trapping into defects in ptype GaAs. Some studies claimed that no positron trapping O C C U ~S , ~-~ but some other investigation argued that defects can be observed by positron in ptype G a A ~. ~-l l Dannefaer et al. found clear evidence of positron trapping in the p-type G ~A S . ~ Le Berre et al. found stronger temperature dependence of positron lifetime other than the simple thermal expansion, which was attributed to lattice expansion associated with positron-phonon ~o u p l i n g . ~ Wang et al. have also observed that the positron trapped into vacancy clusters in the deformed p-type GaAs." Fujii et al. found that interstitial clusters were introduced by Zn-doping." Thus, whether exist some defects that can be detected by positron measurement in p-type GaAs is still an open question, and this will be the subject of present work.

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Defect Properties in Plastically Deformed p-GaAs Studied by Positron Lifetime Measurements

Cited by 3 publications

References 16 publications

Evidence of positron trapping into defects in Zn-doped GaAs

Evidence of positron trapping into defects in Zn-doped GaAs

Accurate theoretical prediction on positron lifetime of bulk materials

Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra

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