Defect properties of ZnO nanowires

Stehr, Jan Eric; Devika, M.; Reddy, N. Koteeswara; Tu, C. W.; Chen, Weimin; Buyanova, Irina

doi:10.1063/1.4865651

Cited by 6 publications

(2 citation statements)

References 23 publications

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“…[54,55] and can easily be created after ion implantation [39]. Secondly, there is an ODMR signal consisting of a single line with a g-factor of ~ 1.996 (peaking around 1215 mT) which can be attributed to oxygen vacancies (VO) [49,56,57]. The appearance of the VO ODMR signal is consistent with the PL results, which also indicate the formation of VO's after N implantation.…”

Section: Resultssupporting

confidence: 80%

Effects of N implantation on defect formation in ZnO nanowires

Stehr

Chen

et al. 2019

Thin Solid Films

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One-dimensional ZnO nanowires are a promising material system for a wide range of optoelectronic and photonic applications. Utilization of ZnO, however, requires high-quality ZnO with reliable n-type and p-type conductivity, with the latter remaining elusive, so far. In this work we report on effects of N doping via ion implantation on defect formation in ZnO nanowires studied by optically detected paramagnetic resonance (ODMR) spectroscopy complemented by photoluminescence spectroscopy. After N implantation, zinc interstitial shallow donors, which are formed as a result of ion implantation, are observed in addition to effective mass type shallow donors. Additionally, ODMR signals related to oxygen vacancies can be observed. Implantation also causes formation of a new nitrogen related defect center, which acts as an acceptor. The present findings are of importance for understanding impacts of different defects and impurities on electronic properties of nanostructured ZnO and achieving ptype conductivity via nitrogen doping.

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Section: Resultssupporting

confidence: 80%

Effects of N implantation on defect formation in ZnO nanowires

Stehr

Chen

et al. 2019

Thin Solid Films

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“…Zinc oxide (ZnO) nanowires have been intensively studied for the potential application as field emitters. 3,4 ZnO nanowires can be synthesized with various methods including thermal evaporation/condensation, 5 chemical vapor deposition, 6 hydrothermal solution, 7 and thermal oxidation. 4 In the thermal oxidation method, ZnO nanowires grow directly from the Zn layer, without a catalyst and under mild temperatures.…”

Section: Introductionmentioning

confidence: 99%

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays

Zhang

et al. 2017

ACS Appl. Mater. Interfaces

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Zinc oxide (ZnO) nanowires are prepared for application in large area gated field emitter arrays (FEAs). By oxidizing Al-coated Zn films, the population density of the ZnO nanowires was tuned precisely by varying the thickness of the Al film. The nanowire density decreased linearly as the thickness of the Al film increased. Optimal field emission properties with a turn-on field of 6.21 V μm and current fluctuations less than 1% are obtained. This can be explained by the minimized screening effect and good electrical conductivity of the back-contact layer. The mechanism responsible for the linear variation in the nanowire density is investigated in detail. Addressable FEAs using the optimal ZnO nanowire cathodes were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results indicate that ZnO nanowires could be applied in large area FEAs.

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