Defect reduction in (112̄0) <i>a</i>-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

Haskell, B. A.; Wu, Feng; Craven, Michael D.; Matsuda, Shigeaki; Fini, P.; Fujii, Tetsuo; Fujito, Kenji; DenBaars, Steven P.; Speck, J. S.; Nakamura, Shuji

doi:10.1063/1.1593817

Cited by 186 publications

(145 citation statements)

References 17 publications

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“…To improve the efficiency of GaN-based devices, various strategies are employed with the aim to reduce the high dislocation densities inherent to the heteroepitaxial growth of GaN and avoiding polarization fields which are detrimental to optical devices [2,3]. However, these growth strategies often result in the formation of stacking faults: Especially the growth of non-and semi-polar GaN layers [4][5][6][7][8] as well as epitaxial-lateral overgrowth [9][10][11][12][13][14] or the coalescence overgrowth of nanowires [15][16][17][18] are associated with the formation of basal-plane stacking faults independent of which growth technique is used. As a consequence, the emission characteristics and transport properties of the layers are changed [11,19].…”

Section: Introductionmentioning

confidence: 99%

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

108

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Abstract. Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

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Section: Introductionmentioning

confidence: 99%

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

108

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“…Professor Nakamura and his colleagues at the University of California, Santa Barbara (UCSB) made a significant contribution to the research on nonpolar/semipolar crystal growth and devices under the Exploratory Research for Advanced Technology (ERATO) program sponsored by the Japan Science and Technology Agency (JST). (10) The lowdefect growth of a-plane, (11) m-plane, (12) and semipolar-plane (13) GaN was achieved through epitaxial lateral overgrowth, and an a-plane LED was demonstrated in 2005, (14) as shown in Fig. 2.…”

Section: Challenges Toward Realizing Innovative Devices Using Gan Submentioning

confidence: 99%

Current Status and Future Prospects of GaN Substrates for Green Devices

2013

Sensors and Materials

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Recently, single-crystal substrates applied to optoelectronic devices, such as sapphire, GaN, and SiC, have been attracting much attention for use in green devices. At present, they are mainly used for the blue-violet semiconductor laser that is applied as the light source of Blu-ray disc equipment. In the near future, it is highly likely that they will be introduced into white LEDs used for lighting and LCD backlight, power transistors to be used for power converters, and also into power semiconductors such as power diodes, leading to the rapid growth of the green device market involving GaN, SiC and diamond. These single-crystal substrates are expected to serve as a trigger to realize a low-carbon and low-energy society, complying with the projected cutbacks of power and CO 2 emission by 70 billion kWh and 40 million tons per year, respectively. This is why they are referred to as "green devices". In this paper, we will discuss the recent approaches that are in progress to develop new devices, taking GaN substrates as an example. Furthermore, we will review current problems and future perspectives for the most critical issue of realizing large substrates, as well as for the crystal growth method and manufacturing process that affect crystal quality.

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“…Therefore, the reduction of TD density is essential to improve the performance of a-plane light-emitting devices. Lateral epitaxial overgrowth (LEO) techniques were widely employed in the past to reduce defect density in nonpolar GaN [12]. In our previous work, we performed the LEO on a series of nanorod templates with varied etching depth to realize the defect-reduction and quality improvement in the subsequently grown a-plane GaN layer [13].…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates

Huang

Ling

Chan

et al. 2011

IEEE J. Quantum Electron.

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Abstract-A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dependent photoluminescence (PL). Due to the absence of quantum-confined Stark effect, the negligible PL emission peak shift and nearly identical power index for all samples were observed. In contrast to the as-grown MQWs, the thermal activation energy and internal quantum efficiency of NRELOG MQWs exhibit 1.6-fold and 4-fold increases, respectively, which are attributed to the improvement of crystal quality by NRELOG. Furthermore, the Shockley-Read-Hall nonradiative coefficient, determined from the fits of power-dependent PL quantum efficiency, is also apparently reduced while MQWs are grown on NRELOG GaN template. The results show the feasibility to fabricate high radiative efficiency a-plane devices via NRELOG.Index Terms-A-plane, InGaN/GaN multiple quantum wells, internal quantum efficiency, nanorod lateral epitaxial overgrowth.

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Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

Cited by 186 publications

References 17 publications

Luminescence associated with stacking faults in GaN

Luminescence associated with stacking faults in GaN

Current Status and Future Prospects of GaN Substrates for Green Devices

Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates

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