Defect-related electronic metastabilities in chalcopyrite compounds

Hammer, Maria S.; Neugebohrn, Nils; Riediger, Julia; Neerken, Janet; Ohland, J.; Riedel, I.; Kiowski, Oliver; Wischmann, Wiltraud

doi:10.1016/j.physb.2013.11.026

Cited by 2 publications

(1 citation statement)

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“…Metastability in CIGS solar cells has been observed as a change in V OC with light soaking and is often attributed to configuration changes of the ( V Se – V Cu ) divacancy complex from a donor to acceptor state via a large lattice relaxation mechanism. [ 27–35 ] A number of groups have reported an increase in V OC under light soaking which has been attributed to increase in apparent doping density. [ 4,7,13–15,34,35 ] Erslev et al [ 35 ] observed an increase in carrier density in Na‐containing devices after light exposure, but no increase in carrier density in Na‐free CIGS devices.…”

Section: Figurementioning

confidence: 99%

Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se₂ Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Walkons

Jahandardoost

Friedlmeier

et al. 2021

Physica Rapid Research Ltrs

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The effects of Na and RbF alkali treatment on the metastability behavior of CdS/Cu(In,Ga)Se2 solar cells are investigated with stress factors of heat, junction bias, and illumination. Four device types with and without Na or RbF treatments are subjected to heat‐ and light‐soaking under open‐ and short‐circuit (OC, SC) junction bias. Low‐Na devices show a higher bandgap due to increased minimum Ga content, higher recombination current, and lower open‐circuit voltage (VOC). Devices with RbF post‐deposition treatment (PDT) show an improvement in net doping density ≈1016 cm−3, VOC, and efficiency. Heat‐ and light‐soaking under OC junction bias provokes an increase in net carrier concentration and VOC irrespective of the alkali treatments. After SC stress, a decrease in VOC and net carrier concentration is observed, which can be stabilized by RbF‐PDT. An increase in Na and oxygen concentration in CIGS is observed for baseline and low‐Na devices, respectively, after OC stress. The oxygen concentration in CdS decreases after heat‐ and light‐soaking for devices without RbF‐PDT, whereas it remains unchanged for devices with RbF‐PDT. The atomic concentration profiles in CIGS significantly stabilize as a function of stress with the addition of RbF‐PDT.

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Section: Figurementioning

confidence: 99%

Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se₂ Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Walkons

Jahandardoost

Friedlmeier

et al. 2021

Physica Rapid Research Ltrs

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Light-induced changes in the minority carrier diffusion length of Cu(In,Ga)Se2 absorber material

Heise

Gerliz

Hammer

et al. 2017

Solar Energy Materials and Solar Cells

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Defect-related electronic metastabilities in chalcopyrite compounds

Cited by 2 publications

References 6 publications

Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se₂ Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se₂ Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Light-induced changes in the minority carrier diffusion length of Cu(In,Ga)Se2 absorber material

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Defect-related electronic metastabilities in chalcopyrite compounds

Cited by 2 publications

References 6 publications

Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se2 Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se2 Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Light-induced changes in the minority carrier diffusion length of Cu(In,Ga)Se2 absorber material

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Product

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Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se₂ Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se₂ Solar Cells with Stress Testing under Heat, Light, and Junction Bias