2020
DOI: 10.1016/j.apsusc.2019.144537
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Defect-rich exfoliated MoSe2 nanosheets by supercritical fluid process as an attractive catalyst for hydrogen evolution in water

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Cited by 24 publications
(13 citation statements)
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“…In 2D molybdenum diselenide (MoSe 2 ), a van der Waals semiconductor with monolayer direct bandgap of 1.5 eV 1 , these inhomogeneities can range in size from as small as a selenium vacancy [2][3][4] to microscale in the case of grain boundaries and locally oxidized domains [5][6][7] . While many researchers are pushing the limits of crystal perfection, the inhomogeneities and defects have proven beneficial in the cases of quantum emission from atomic vacancies [8][9][10] , electronic transport modification at grain boundaries 11,12 , and improved catalysis in substoichiometric materials 13 . Often, these features are only observed via low-throughput techniques such as transmission electron microscopy or scanning tunneling microscopy [14][15][16] .…”
Section: Introductionmentioning
confidence: 99%
“…In 2D molybdenum diselenide (MoSe 2 ), a van der Waals semiconductor with monolayer direct bandgap of 1.5 eV 1 , these inhomogeneities can range in size from as small as a selenium vacancy [2][3][4] to microscale in the case of grain boundaries and locally oxidized domains [5][6][7] . While many researchers are pushing the limits of crystal perfection, the inhomogeneities and defects have proven beneficial in the cases of quantum emission from atomic vacancies [8][9][10] , electronic transport modification at grain boundaries 11,12 , and improved catalysis in substoichiometric materials 13 . Often, these features are only observed via low-throughput techniques such as transmission electron microscopy or scanning tunneling microscopy [14][15][16] .…”
Section: Introductionmentioning
confidence: 99%
“…These crystal defects are either the Mo vacancies or Se vacancies, and the lattice fringes are separated by these vacancy defects. Besides, the HRTEM images shown in Figure 2e and f are corresponding to the typical (100) and (001) planes of the hexagonal MoSe 2 , respectively [31–34] . Interestingly, it is worth mentioning that a large number of such vacancy defects and exposed edge surfaces can be readily found in the sample (Figure S4).…”
Section: Resultsmentioning
confidence: 89%
“… 30 The defects, including chalcogen vacancy, metal vacancy, line, and antisite, etc., result in alteration of the electronic structure and modify the intrinsic characteristics of 2D MoSe 2 in favor of electrocatalytic H 2 generation. 6 , 20 , 21 For instance, vacancy creation induces the catalytic activity in the inert basal plane and edges of 2D MoSe 2 and enhances the electronic conductivity. 6 , 20 Gao et al 6 produced dual Mo and Se vacancies in 2H MoSe 2 through chemical vapor deposition.…”
Section: Modulating the Electrocatalytic And Physicochemical Properti...mentioning
confidence: 99%