Defect spectra in epitaxial CuInSe2 grown by MOVPE

Rega, N.; Siebentritt, Susanne; Beckers, I.; Beckmann, J.; Albert, J.; Lux‐Steiner, Martha Ch.

doi:10.1016/s0040-6090(03)00188-3

Cited by 29 publications

(16 citation statements)

References 15 publications

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“…The primary differences in these samples are growth temperature (60°C lower for UIUC-2) and composition (closer to stoichiometry for UIUC-2). The shallow emission energies are much farther from the band edge (150-260 meV) than is usually observed in CIS epitaxial layers [17], but are comparable to separations observed in the polycrystalline samples studied here. Comparing the spectra suggests that the deep defect response does not originate from grain boundaries, but is characteristic of the bulk material, as expected from the high performance devices made from polycrystalline materials as compared to those made from single crystal materials.…”

Section: Resultssupporting

confidence: 80%

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

2009

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The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se 2 thin films was investigated by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Experiments were performed on device-grade polycrystalline layers and single crystal thin films. PL transitions identified by others as indicating a shallow state with an ionization energy of ~16 meV is proposed to be a transition into band tail states rather than a distinct shallow defect.

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Section: Resultssupporting

confidence: 80%

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

2009

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“…For the reference samples A and B a single asymmetric peak is observed at 0.972 eV for CISe and at 1.600 eV for CGSe. These values are typical for Cu‐poor material14, 19 and correspond to defect related emission. The peak positions and full widths at half maximum (FWHM) are in good agreement with previous studies14, 19 for samples with similar [Cu]/([In]+[Ga]) ratios.…”

Section: Resultsmentioning

confidence: 77%

“…These values are typical for Cu‐poor material14, 19 and correspond to defect related emission. The peak positions and full widths at half maximum (FWHM) are in good agreement with previous studies14, 19 for samples with similar [Cu]/([In]+[Ga]) ratios. The asymmetric line shape was previously assigned to broadened defect energies due to the high density of defects and compensation, and resulting potential fluctuations 14, 19.…”

Section: Resultsmentioning

confidence: 77%

Chalcopyrite Semiconductors for Quantum Well Solar Cells

Afshar

Sadewasser

Albert

et al. 2011

Advanced Energy Materials

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The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se 2 in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe 2 and CuGaSe 2 were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confi nement in the low band gap CuInSe 2 layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profi le was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confi rmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells.

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“…Therefore: yes, we do need another PL study on CuInSe 2 with material grown under the same conditions as the material used in our PL study of CuGaSe 2 , with a comprehensive accounting for the compositional, temperature and intensity dependencies. First results of this study have been published before [17]. Here we give a much more detailed description of the spectra in every aspect: their change with composition, with temperature and with intensity.…”

Section: Introductionmentioning

confidence: 99%

Do we really need another PL study of CuInSe ₂ ?

Siebentritt¹,

Rega²,

Zajogin³

et al. 2004

phys. stat. sol. (c)

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A detailed composition, intensity and temperature dependent photoluminescence (PL) study of CuInSe 2 has been performed to obtain data on defects, directly comparable to the defects in CuGaSe 2 , prepared under the same conditions. Epitaxial films are grown by metal organic vapour phase epitaxy on GaAs. The PL study reveals three shallow defects, which are responsible for the doping behaviour in CuInSe 2 : two acceptors, 40 and 60 meV deep, and a donor, approximately 12 meV deep. The shallower acceptor dominates for low or no Cu-excess, whereas the deeper one dominates material grown under high Cuexcess. These defects and their compositional dependence are the same as observed in CuGaSe 2 . Thus no fundamental difference concerning the shallow defects exists between these two materials.

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Defect spectra in epitaxial CuInSe2 grown by MOVPE

Cited by 29 publications

References 15 publications

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Chalcopyrite Semiconductors for Quantum Well Solar Cells

Do we really need another PL study of CuInSe ₂ ?

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Defect spectra in epitaxial CuInSe2 grown by MOVPE

Cited by 29 publications

References 15 publications

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2Thin Films

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2Thin Films

Chalcopyrite Semiconductors for Quantum Well Solar Cells

Do we really need another PL study of CuInSe 2 ?

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Product

Resources

About

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Do we really need another PL study of CuInSe ₂ ?