Defect studies in Cu2ZnSnSe4 and Cu2ZnSn(Se0.75S0.25)4 by admittance and photoluminescence spectroscopy

Kask, Erkki; Grossberg, Michael; Josepson, Raavo; Salu, Pille; Timmo, K.; Krustok, J.

doi:10.1016/j.mssp.2013.02.009

Cited by 43 publications

(21 citation statements)

References 21 publications

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“…The two kinds of defect levels in CZTSSe were also found by Kask et al [9]. They have assumed that the EAl and EA2 state belong to an interface state and acceptor defect of CU zn antisite, respectively, on the basis of their AS measurement and photoluminescence.…”

supporting

confidence: 52%

Defect study of Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf> thin film with different Cu/Sn ratio by admittance spectroscopy

Luo

Islam

Halim

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Defect properties of CU2ZnSn(S"Sel.,)4 (CZTSSe) were investigated by admittance spectroscopy (AS). Two defect states (labeled EAt and EA2) were observed in CZTSSe (x=O.15) with different CutSn ratio. When the CutSn ratio increased from 1.75 to 1.95, the activation energy of EAt and EA2 decreased and the defect densities increased. The capture cross sections of EAt and EA2 defects are in the order from 10. 16 cm 2 to 10. 18 cm 2 ,indicating that these two defects possibly do not impact on device performance.

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supporting

confidence: 52%

Defect study of Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf> thin film with different Cu/Sn ratio by admittance spectroscopy

Luo

Islam

Halim

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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“…For that purpose, we start by discussing the dependence on excitation power and temperature of PL for both types of materials. Regarding the effect on the PL of the increase of excitation power, the peak energy evidences a blueshift that in some cases is just of a few meV/decade (but it should also be noticed that in some cases, no dependence was reported) [12,13,36,53] and, in other cases, considerably higher values were reported [10][11][12][13][30][31][32][33][34][35]37]. The case with a blueshift with few meV/decade was usually observed in Cu-rich films and the estimated values for the m parameter [see Eq .…”

Section: Recombination Modelsmentioning

confidence: 89%

“…The mechanisms for radiative transitions depend mainly on the doping and compensation levels, which in these materials are mostly due to intrinsic defects. Different models are considered in the literature [10][11][12][13][14]23,[30][31][32][33][34][35][36][37], namely, excitonic recombination, free-to-bound transition, donoracceptor pair (DAP) recombination, quasi-DAP (QDAP) recombination, and radiative channels involving fluctuating potentials. Concerning the latter, band-gap and electrostatic fluctuations resulting from structural and electronic inhomogeneities have an important influence on the recombination mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case ofCu2ZnSnS4

Teixeira

Sousa

et al. 2014

Phys. Rev. B

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The theoretical models of radiative recombinations in both CuIn 1−x Ga x Se 2 chalcopyrite and Cu 2 ZnSnS 4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu 2 ZnSnS 4 -based solar cells in which the absorber layer was grown through sulphurization of multiperiod structures of precursor layers. For both samples the luminescence is dominated by an asymmetric band with peak energy at ∼1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ∼60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of ∼280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed.

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“…7(B) shows the capacitance against logarithmic frequency plots for different CZTSSe thin electrodes. The capacitance of the electrode material in electrolyte comprises of the free carrier capacitance across the width of the space charge region and it decreases with higher frequency until the energy of electron states equals the electron quasi-Fermi level [29].…”

Section: Nyquist Plotsmentioning

confidence: 99%

Electrochemical impedance analysis of spray deposited CZTS thin film: Effect of Se introduction

et al. 2016

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Defect studies in Cu2ZnSnSe4 and Cu2ZnSn(Se0.75S0.25)4 by admittance and photoluminescence spectroscopy

Cited by 43 publications

References 21 publications

Defect study of Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf> thin film with different Cu/Sn ratio by admittance spectroscopy

Defect study of Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf> thin film with different Cu/Sn ratio by admittance spectroscopy

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case ofCu2ZnSnS4

Electrochemical impedance analysis of spray deposited CZTS thin film: Effect of Se introduction

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