2016
DOI: 10.1021/acsenergylett.6b00196
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Defect Tolerance in Methylammonium Lead Triiodide Perovskite

Abstract: Photovoltaic applications of perovskite semiconductor material systems have generated considerable interest in part because of predictions that primary defect energy levels reside outside the bandgap. We present experimental evidence that this enabling material property is present in the halide-lead perovskite, CH 3 NH 3 PbI 3 (MAPbI 3 ), consistent with theoretical predictions. By performing X-ray photoemission spectroscopy, we induce and track dynamic chemical and electronic transformations in the perovskite… Show more

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Cited by 567 publications
(547 citation statements)
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“…65 On the other hand, in LHPs, deep traps often have rather high formation energies and are not easily formed, and most shallow trap states that are formed often do not strongly effect on the optical properties. 6668 Therefore, LHPs are often described as “defect-tolerant” materials. 43,6669 For instance, the superior properties of MAPbI 3 arise from the absence of deep traps, and iodine vacancies (V I ) only form shallow traps.…”
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“…65 On the other hand, in LHPs, deep traps often have rather high formation energies and are not easily formed, and most shallow trap states that are formed often do not strongly effect on the optical properties. 6668 Therefore, LHPs are often described as “defect-tolerant” materials. 43,6669 For instance, the superior properties of MAPbI 3 arise from the absence of deep traps, and iodine vacancies (V I ) only form shallow traps.…”
mentioning
confidence: 99%
“…6668 Therefore, LHPs are often described as “defect-tolerant” materials. 43,6669 For instance, the superior properties of MAPbI 3 arise from the absence of deep traps, and iodine vacancies (V I ) only form shallow traps. 6668,7074 Similarly, in its bromide counterpart, V Br are generally described as shallow defects.…”
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“…2,5 These properties, combined with the processability of these materials, 6,7 have resulted in solar cell device efficiencies rising rapidly to over 22%. 8 However, the commercial applicability of these materials is hampered by their relative lack of stability compared to established inorganic and organic semiconductors.…”
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confidence: 99%
“…The challenge in the assessment of the true lateral grain size in these materials is largely due to their sensitivity to electron and X-ray beam damage, 8,9 which precludes the use of standard crystallographic mapping methods such as electron backscatter diffraction or transmission electron microscopy. 9 …”
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confidence: 99%