Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen

Talochkin

Гутаковский

et al. 2003

SSP

Recrystallization of the high-dose H + ion implanted silicon-on-insulator structures during rapid thermal annealing was studied. It was obtained, that recrystallization process is strongly dependent on the hydrogen ion dose. Monocrystalline film, Si nanocrystals, and hydrogen bubble and void containing Si layer were produced after rapid thermal annealing of the structures implanted to the doses of 1 ´ 10 17 , 3 ´ 10 17 , and 5 ´ 10 17 cm -2 , respectively. It was concluded, that no coalescence of micropores took place during rapid thermal annealing at the temperatures up to ~900 o C. Nucleation of crystalline phase occured inside the silicon islands between micropores. That was originated from an ordering of Si-Si bonds as hydrogen atoms were leaving from bound state in the silicon network.

Section: Discussionmentioning

confidence: 99%

“…The used SOI structures had the 500 nm-thick top silicon layer and 280 nm-thick buried SiO 2 . SOI structures were implanted with H + ions at an energy of 24 keV to three doses, namely: 1 ´ 10 17 (low dose -LD), 3 ´ 10 17 (medium dose -MD), and 5 ´ 10 17 (high dose -HD) cm -2 . Ion plasma source was used for implantation.…”

Section: Methodsmentioning

confidence: 99%

Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions

Talochkin

Гутаковский

et al. 2003

SSP

“…As a result, the degree of supersaturation of germanium in the SiO bulk is not sufficient for the formation of large nanocrystals and can give rise only to small nanoclusters. The second cause consists in the fact that the top silicon layer is heavily saturated with hydrogen under the conditions of formation of the SOI structure [8].…”

Section: Solid State Vols 131-133mentioning

confidence: 99%

SiGe Heterostructures-on-Insulator Produced by Ge<sup>+</sup>-Ion Implantation and Subsequent Hydrogen Transfer

Черков

Voelskow³

et al. 2007

SSP

The properties of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon-on-insulator (SOI) structures are studied. It is shown that no germanium nanocrystals are formed in the buried SiO2 layer of the SOI structure as a result of annealing at the temperature of 1100° C. The implanted Ge atoms segregate at the Si/SiO2 bonding interface. In this case, Ge atoms are found at sites that are coherent with the lattice of the top silicon layer. It is found that the slope of the drain–gate characteristics of the back metal-oxide-semiconductor (MOS) transistors, prepared in the Ge+ ion implanted structures, increases. This effect is attributed to the grown hole mobility due to the contribution of an intermediate germanium layer formed at the Si/SiO2 interface.

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Applied Physics Letters

Журавлев

Черков

et al. 2006

Characteristic features of the visible photoluminescence (PL) spectra were studied in silicon-on-insulator (SOI) wafers following high-dose (3×1017cm−2) ion implantation of hydrogen and annealing at high hydrostatic pressures. The PL behavior of the SOI material was compared with that of hydrogen-implanted bulk Si. Annealing at a pressure above 6kbars produced a wavelength-selective increase (∼37 times) in the intensity of the visible PL from the implanted SOI structures. The results are explained in terms of the effect of an optical resonant cavity formed between the air/SOI and the Si∕SiO2 interfaces as a result of the high-pressure annealing.