Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

“…The lifetime of the SiO 2 passivated sample, on the other hand, was observed to decrease under UV irradiation, which can be attributed to a higher interfacial defect density created by the incoming photons. 20,21 Both the improved surface passivation by Al 2 O 3 and the degraded passivation by SiO 2 remained stable over time. We explain the improvement of the Al 2 O 3 surface passivation under UV exposure by a significant increase of the fixed negative charge density, which was already reported in the pioneering work of Hezel et al for pyrolysis-grown Al 2 O 3 .…”

“…For comparison, the experiment was also carried out for SiO 2 passivated sample ͑from a different wafer ingot than the sample in Fig. 1͒, which received a socalled alneal 20 at 425°C for 15 min to activate the passivation. Figure 3 shows eff as a function of cumulative exposure time for representative samples.…”

Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

“…11 On the other hand, it is noted that D it showed almost no dependence on SiO 2 thickness. Although the physical origin of the RPD-damage is unclear yet, radiation-induced defects 25 are one of the possibilities since vacuum ultraviolet are emitted during the plasma process.…”

Influence of the Recombination Parameters at the Si/SiO2Interface on the Ideality of the Dark Current of High Efficiency Silicon Solar Cells

“…It is generally accepted that after annealing in forming gas or in hydrogen, the recombination centers at the Si/SiO 2 interface are uniformly distributed in the energy gap [9][10][11]. Hence D it (E t ) will be assumed to have a constant value D it .…”