Defects Engineering Induced Ultrahigh Magnetization in Rare Earth Element Nd‐doped MoS₂

Abstract

Various concentrations (0, 0.5, 1, and 5 at%) of Nd are doped into MoS2 single crystals via ion implantation. Experimental results reveal that Nd exists in the form of trivalent state when the doping concentration is below 5 at% and a variety of defects, such as sulfur and molybdenum vacancies, are formed in Nd‐doped MoS2. Compared to pure MoS2 that only shows diamagnetism, Nd doping successfully induces room‐temperature ferromagnetic ordering. Extremely high magnetization (1640 emu cm−3) is observed in 1 at% Nd‐doped MoS2. First‐principles density functional theory calculations suggest that the various structural defects, including substitutions, vacancies, interstitials, antisites, and their complexes, are magnetic possessing large spin moments. The defects coupled with Nd dopants ferromagnetically may form the bound magnetic polarons to induce ferromagnetic ordering. The work has demonstrated that through defects engineering and rare earth element doping, extremely high magnetization materials can be achieved in layered structured materials. On the other hand, though the experiment work is done by implanting MoS2 single crystals, theoretical calculations indicate that 2D MoS2 with bilayers or a few layers can also result in ultrahigh magnetization.

O Plasma Treatment Enhanced Room Temperature Ferromagnetism in MoS2

“…The magnetic properties of O 0 -MoS 2 and O 40 -MoS 2 were studied by the measurement of magnetic field dependent magnetization (M-H) loops at 300 K. As can be seen from Fig. 4(a), for the as-prepared MoS 2 , negative slope can be observed (− 5.13 × 10 -7 emu/g⋅Oe), indicating the diamagnetic properties in O 0 -MoS 2 which originates from bulk MoS 2 [23]. A very small kink can be observed in the low field region, indicating the negligible small ferromagnetic component.…”

Embedded lanthanoid ions modulated the periodic luminescence of transition metal dichalcogenide monolayers prepared from an aqueous orecursor

“…30 The implantation of Dy or Nd in MoS 2 single crystal induced room-temperature ferromagnetic ordering. 31,32 Sm was doped to increase the current ratio and mobility of a MoS 2 field effect transistor. 33 However, the diversity and discipline of the properties of lanthanoids in 2D-TMD materials have not been explored.…”

The exchange between anions and cations induced by coupled plasma and thermal annealing treatment for room-temperature ferromagnetism

“…[10][11][12] Therefore, 2D materials, with outstanding magnetic properties at room temperature, are highly desirable for the future spintronic and nanoscale electronic industry. [13][14][15][16][17] Among 2D materials, 2D transition metal dichalcogenides (TMDs) have become the ideal choice for the applications of nanoscale optoelectronic devices owing to their extraordinary optical, electrical, mechanical, and chemical properties. [18][19][20] 2D rhenium disulfide (ReS 2 ), a member of the TMD family, has attracted special attention due to its excellent environmental stability, distinctive interlayer decoupling, 21 and strong anisotropic properties, 22,23 which endow a higher degree of freedom for constructing novel electronic devices.…”