Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

“…The dominant contribution to the conductivity in our implanted structure was that of the lowmobility electrons (μ nh2 =4790 cm 2 V −1 s −1 , and average n h2 =2.34•10 16 cm -3 and σ nh2 =17.9 Ohm −1 cm −1 with σ 0 =29.4 Ohm −1 cm −1 ). Similar low-mobility electrons were observed earlier in MCT implanted with arsenic ions with 190 keV energy and 10 13 , 10 14 and 10 15 cm -2 fluence [11,22]. Thus, without doubt, these electrons originated from implantation-induced donor defects and were located in the n + -layer of the implanted film.…”

“…To understand the origin of different carriers in the implanted film, we can compare the data on electrical profiling with those obtained with transmission electron microscopy (TEM). These data can be found, for example, in [22] (figure 1). After ion implantation, the dominant contribution to the conductivity belong to low-mobility (μ nh2 ∼5000-7000 cm 2 V −1 s −1 ) electrons (figure 3, curve 1) with concentration peaking at ∼10 18 cm -3 .…”

“…The next sizeable contribution was that of the high-mobility electrons in the n-layer. This layer is formed due to the implantation-induced generation of Hg I atoms, their diffusion from the near-surface region towards the depth of the material, and annihilation with existing acceptors, V Hg [11,[22][23][24][25]. The n-type conductivity in this layer is due to residual/intentionally introduced donors, and in our case it originated from indium doping.…”

Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

“…These carriers are known to originate in the atoms of interstitial mercury captured by implantation-induced structural defects, such as dislocation loops visualized in our nanoscale structural studies (Figs. 1, 2, 3, 4, 5 see also Izhnin et al 2018Izhnin et al , 2019. In sample #1, these electrons provided partial conductivity 11.7 (Ohm cm) -1 , as the primary MSEs (Fig.…”

“…Other carriers detected in this sample included the high-mobility (99,600 cm 2 /(V s) and intermediate-mobility (19,400 cm 2 /(V s) electrons; their average concentration equaled 4.15•10 14 cm −3 and 5.50•10 14 cm −3 , respectively. The high-mobility electrons in the n-layers of the n + -n-p structures are known to originate in the residual (or intentionally introduced, as in our case with indium doping) donors that determine the conductivity after the atoms of Hg I had diffused into the crystal and annihilated with mercury vacancies that defined the p-type conductivity before the implantation (Izhnin et al 2018). The intermediate-mobility electrons (or at least a part of them) originated in the donor complexes that Hg I atoms form with quasi-point defects induced by the implantation (Izhnin et al 2019).…”