Defects in Dilute Nitrides

Chen, Weimin; Buyanova, Irina; Tu, C. W.; Yonezu, Hiroo

doi:10.12693/aphyspola.108.571

Cited by 4 publications

(5 citation statements)

References 21 publications

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“…12 Second, an instability of as-grown samples exists and the subsequent annealing treatments cause a severe degradation of the minority-carrier lifetimes. 13,14 The formation of point defects such as N-N split interstitial 15 and the As Ga antisite 16 have been suggested as electron traps in the Ga͑In͒NAs alloy, and also clustering of N atoms has been reported to dominate the emission in dilute nitrides of GaAs, 17 creating energy levels below the conduction-band energy that get deeper as the number of N atoms increases. 18 The degradation of the structural quality of the alloy has been directly related to the initial configuration of N at atomic scale 19,20 and therefore its characterization is of primary interest to understand the electrical and optical properties and thus optimize the performance of this system.…”

Section: Introductionmentioning

confidence: 99%

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

et al. 2009

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While high-angle annular dark field scanning transmission electron microscopy ͑HAADF-STEM͒ has been successfully used for the analysis of heavy atoms in a lighter matrix, the detection of light atoms in a heavy matrix remains challenging. In this paper, we show that the combination of first-principles total-energy calculations with aberration-corrected HAADF-STEM experimental and simulated images can be used to overcome this problem. The application of this methodology to the analysis of dilute nitrides of GaAs points to the existence of a major proportion of ͑2N As ͒ nn in the alloy, which is a relatively stable configuration in GaAsN as revealed by our energetic calculations. Our study has allowed us to shed light in the effect of the local distortion of the lattice due to different configuration of atoms in HAADF-STEM imaging.

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Section: Introductionmentioning

confidence: 99%

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

et al. 2009

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“…Moreover, this shift could be attributed to the fact that annealing can yield [23]. since RTA annealing has not led to a reduction or elimination of the S-shape as it is reported for other III-V-N dilute nitride semiconductors [25].…”

Section: U) T E M P E R a T U R E ( K )mentioning

confidence: 56%

Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates

Alburaih

Albalawi

Henini

2020

Materials Science in Semiconductor Processing

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This work investigates the effect of the thickness of the epitaxial layer (100nm and 1μm) on the optical properties of quaternary GaAs0.1P0.89N0.01 alloys. Furthermore, the effect of rapid thermal annealing (RTA) on their properties has been studied using the Photoluminescence (PL) technique. Increasing the thickness of the epilayer led to an enhancement of the PL intensity as well as the energy bandgap, which was shifted to higher energy (from 1.82 eV in 100nm to 1.94 eV in 1μm layer). However, the 1.94 eV bandgap energy is not ideal for solar cells based materials grown on GaP substrates. Post-growth thermal annealing by rapid thermal annealing (RTA) for both samples resulted in an enhancement in the optical properties as observed by a decrease of the Full Width at Half Maximum (FWHM) and an increase of the PL intensity. Therefore, all results obtained in this study indicate that GaAs0.1P0.89N0.01 with 100nm epilayer thick is better choice to fabricate good efficiency solar cells based materials on GaP substrates as compared to 1μm sample.

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“…However, point defects such as the N-N split interstitials [71] and the AsGa antisites [72] have been identified as electron traps in Ga(In)NAs, and the local clustering of N atoms has been suggested to create a range of defect states within the energy gap [73]. Therefore, the characterization at the atomic scale of the behavior of N at the few percent level in GaAs is critical to understand and optimize the performance of this system.…”

Section: Analysis Of the N Distribution In Gaasnmentioning

confidence: 99%

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

Sales

Beltrán

Lozano

et al. 2012

Semiconductor Research

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This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III-V semiconductor nanostructures and heterostructures.

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Defects in Dilute Nitrides

Cited by 4 publications

References 21 publications

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

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