2010
DOI: 10.1557/proc-1268-ee01-05
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Defects in Irradiated ZnO Thin Films Studied by Photoluminescence and Photoconductivity

Abstract: Pulsed-laser-deposited ZnO thin films were exposed to a 1.5 MeV helium ion beam to study the changes in radiative and non-radiative recombination. We first measured photoluminescence (PL) spectra at 4.2 K excited with the 325 nm line of a HeCd laser. The asdeposited films showed a donor-bound exciton peak at 3.3567 eV attributed to Zn interstitials. After irradiation the donor-bound-exciton dominated PL spectra shifted to acceptor-bound behaviour with a signal at 3.3519 eV, tentatively attributed to Li or Na a… Show more

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“…The activation energies of both the emissions agree very well. It is also to be noted that energetic electrons [42] or He ions [19] both suppress the NBE peak of ZnO. However, 6 MeV H + ions enhance the NBE and suppress the DLE in hydrothermal ZnO.…”
Section: Resultsmentioning
confidence: 96%
See 1 more Smart Citation
“…The activation energies of both the emissions agree very well. It is also to be noted that energetic electrons [42] or He ions [19] both suppress the NBE peak of ZnO. However, 6 MeV H + ions enhance the NBE and suppress the DLE in hydrothermal ZnO.…”
Section: Resultsmentioning
confidence: 96%
“…However, neither of the techniques reveal a high scale of disorder in the irradiated sample. Earlier reports indicate that electrons [13] or He ions [19] or H + ions [16] of comparable energy create disorder to a greater extent in ZnO. The possible reason for the low disorder by MeV H + ions in hydrothermal ZnO has been discussed in the light of the relevant literature on this topic.…”
Section: Introductionmentioning
confidence: 99%