Defects in LEC‐grown Indium Phosphide Crystals Doped with Tin

Abstract

Crystalline defects in Sn-doped LEC indium phosphide have been revealed by chemical etching and analyzed by TEM. Grown-in dislocations, various kinds of defect clusters and .colonies of microdefects were found. The symmetrical defect clusters are shown to equate mostly with larger dislocation loops exhibiting shear components and/or other dislocation arrangements generated by a stress source which is positioned in the centre of the dislocation cluster. Those centres are often formed by a plate-like agglomeration composited of tiny inclusions and very small faulted dislocation loops. Such planarly arranged accumulations of microdefects lie on { l l l ) planes. The direct vicinity of single threading grown-in dislocations is always enriched with tiny perfect dislocation loops and precipitates. Additionally, very large isolated interstitial-type perfect dislocation loops with b = u0/2 (110) have been found by TEM experiments. Mostly, the { 1 1 0 ) habit plane of such loops is decorated with an high number of small dislocation loops and precipitates as a consequence of dislocation climb.

Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

“…2b shows that the surface of as-grown undoped InP wafer sample AN-01 has an 'orange peel' aspect and it is easy to discriminate between low-and high-dislocation areas. Such a surface characteristic is caused by the cell distribution of dislocations in InP [17][18][19][20]. Impurities in the sample accumulate around the dislocations by Cottrell force interaction [21,22], resulting in the 'orange peel' like surface revealed by A-B solution.…”