Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Wang, Wei Lin; Peng, Chun; Ho, Yen Teng; Chuang, Shu Chang; Chang, Li

doi:10.1116/1.3539046

Cited by 8 publications

(3 citation statements)

References 18 publications

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“…3) Consequently, the growth of m-plane 4) or a-plane 5) ZnO has attracted much attention since the QCSE does not occur along nonpolar directions. However, high densities of basal plane stacking faults (BSFs) -on the order of 10 5 cm À1 -are frequently observed in nonpolar ZnO films regardless of the substrate and/or growth method, [6][7][8][9] while these planar defects are rarely observed in c-plane ZnO. According to Venne ´gue `s et al, 8) coalescence of nuclei during the first stage of growth is responsible for the generation of BSFs in a-plane ZnO.…”

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confidence: 99%

Spectral and Spatial Luminescence Distribution ofm-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

Lin

Jahn

Grahn

et al. 2013

Appl. Phys. Express

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The luminescence of stacking faults (SFs) in m-plane ZnO epilayers grown by metal organic chemical vapor deposition is analyzed using spatially resolved cathodoluminescence (CL) spectroscopy. Complementary features observed in CL images for detection energies of 3.379 (near-band-edge) and 3.324 eV confirm the latter to be a typical SF-associated luminescence. A clear blue shift of the SF-associated luminescence is observed when the electron beam approaches the SF. This experimental result proves the existence of a polarization field in the SFs along the c-axis of the ZnO film. Furthermore, we clearly identify the SF-related transition at low temperatures and at room temperature.

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confidence: 99%

Spectral and Spatial Luminescence Distribution ofm-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

Lin

Jahn

Grahn

et al. 2013

Appl. Phys. Express

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“…The density of BSFs is estimated to be 5:7 Â 10 5 cm À1 , similar to what reported in other works. 15,16 The micrograph recorded along ½0002 ZnO zone axis withg ¼ ½11 20 ZnO , shown in Fig. 3(b), reveals the highly perfect atomic arrangement of the ZnO layer.…”

Section: Surface-bound-exciton Emission Associated With Domain Interfmentioning

confidence: 98%

Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films

Kuo

Lin

Yang

et al. 2012

Applied Physics Letters

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Small amount of ð10 13Þ ZnO domains were found in the m-plane ZnO films grown on m-sapphire by pulsed laser deposition, which provide strain relaxation of the m-ZnO matrix behaving as a low strain layer. Through carefully correlating low-temperature polarized photoluminescence spectra with the x-ray diffraction peak intensity ratio of ð10 13Þ ZnO =ð10 10Þ ZnO of the samples grown at different temperature and after thermal treatment, we found that the broad-band emission around 3.17 eV may result from the interface defects trapped excitons at the boundaries between the ð10 13Þ ZnO domains and the m-ZnO matrix. The more ð10 13Þ ZnO domains in the m-ZnO layer cause the more surface boundary that makes the stronger surface-bound-exciton emission. And the a-axes of both the ð10 13Þ ZnO domains and the m-ZnO matrix are aligned with the c-axis of the sapphire (a-Al 2 O 3 ) substrate. The c-axis of the ð10 13Þ ZnO domains rotates by about 659 against the common a-axis of the m-ZnO. V C 2012 American Institute of Physics. [http://dx.

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“…Recent research has shown that nonpolar ZnO can be successfully deposited on various substrates, such as R-plane sapphire, (100) LiAlO 2 , (100) SrTiO 3 and LaAlO 3 , and (112) LaAlO 3 (LAO) [2][3][4][5]. However, high density basal stacking faults (BSFs) and threading dislocations (TDs) are often observed in such nonpolar films [6,7]. These defects are usually generated during initial growth by biaxial misfit stresses and by the coalescence of adjacent islands which are misoriented with respect to one another, and are believed to degrade the performance of luminescent devices [6,8].…”

Section: Introductionmentioning

confidence: 99%

Defects in semipolar $(1 1\bar {2}\bar {2})$ ZnO grown on (112) LaAlO₃/(La,Sr)(Al,Ta)O₃substrate by pulsed laser deposition

Tian

Peng

et al. 2013

J. Phys.: Condens. Matter

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The microstructure of semipolar [Formula: see text] ZnO deposited on (112) LaAlO3/(La,Sr)(Al,Ta)O3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [Formula: see text] with oxygen-face sense polarity. The misfit strain along [Formula: see text] and [Formula: see text] is relieved through the formation of misfit dislocations with the Burgers vectors [Formula: see text] and [Formula: see text], respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along 〈0001〉, whereas basal stacking faults were rarely found.

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Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Abstract: Articles you may be interested inDefects in nonpolar ( 13 4 ¯ 0 ) ZnO epitaxial film grown on (114) LaAlO3 substrate J. Vac. Sci. Technol. A 32, 02B103 (2014); 10.1116/1.4830275 Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

Cited by 8 publications

References 18 publications

Spectral and Spatial Luminescence Distribution ofm-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

Spectral and Spatial Luminescence Distribution ofm-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films

Defects in semipolar $(1 1\bar {2}\bar {2})$ ZnO grown on (112) LaAlO₃/(La,Sr)(Al,Ta)O₃substrate by pulsed laser deposition

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Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Abstract: Articles you may be interested inDefects in nonpolar ( 13 4 ¯ 0 ) ZnO epitaxial film grown on (114) LaAlO3 substrate J. Vac. Sci. Technol. A 32, 02B103 (2014); 10.1116/1.4830275 Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

Cited by 8 publications

References 18 publications

Spectral and Spatial Luminescence Distribution ofm-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

Spectral and Spatial Luminescence Distribution ofm-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films

Defects in semipolar $(1 1\bar {2}\bar {2})$ ZnO grown on (112) LaAlO3/(La,Sr)(Al,Ta)O3substrate by pulsed laser deposition

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Defects in semipolar $(1 1\bar {2}\bar {2})$ ZnO grown on (112) LaAlO₃/(La,Sr)(Al,Ta)O₃substrate by pulsed laser deposition