Defects in Multicrystalline Si Wafers Studied by Spectral Photoluminescence Imaging, Combined with EBSD and Dislocation Mapping

Mehl, Torbjørn; Sabatino, Marisa Di; Adamczyk, Krzysztof; Burud, I.; Olsen, Espen

doi:10.1016/j.egypro.2016.07.043

Cited by 10 publications

(6 citation statements)

References 10 publications

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“…The observations in this study, where the D07 signal is of localized character, rather suggest this signal to be linked to inclusions. However, a resolution of 0.75 μm cannot distinguish if the signal is following small subgrains formed in the mc‐Si crystallites, as reported by Mehl et al . These studies of FeB–Fe i in HPM wafers with high‐definition PL show a very similar distribution of Fe as found in this study.…”

Section: Resultsmentioning

confidence: 92%

“…As dislocated areas normally exhibit all four D‐band emissions – in particular high in ingots, this is a highly unexpected result which raises questions regarding the physical mechanisms and interactions between dislocations and impurities, leading to the commonly found D1–D4 emissions in silicon wafers. Studies involving splitting the FeB pair by illumination suggest the D07 emission to be caused by Fe i . We suggest this emission is caused by recombination between the conduction band edge E C and the known trap generated by Fe at E T = E V + 0.4 eV .…”

Section: Discussionmentioning

confidence: 99%

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Defect related radiative recombination in mono-like crystalline silicon wafers

Olsen

Bergan

Mehl

et al. 2017

Phys. Status Solidi A

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We report on studies of sub‐bandgap defect related photoluminescence (DRL) signals originating from radiative recombination through traps in the bandgap of cooled mono‐like silicon wafers. Spectrally resolved photoluminescence (SPL) and multivariate curve resolution (MCR) have been used in combination, to study the behaviour of sub‐bandgap photoluminescence (PL) emissions in wafers cut from different heights in a pilot‐scale mono‐like silicon ingot. No DRL signals were found in the main mono‐like body. Strong defect related sub‐bandgap emissions correlating with heavily dislocated areas, are found directly above some of the seed junctions. The DRL signal exhibits a correlation with the number of axis with small angle misalignment in the junctions of the seeds. The signal conventionally labelled D1 (0.80 eV) decreases with ingot height. A mechanism relating this signal to oxygen is proposed. The signals D3 (0.94 eV) and D4 (1.00 eV) are found to co‐occur, supporting previous studies, and similarly to the D2 (0.87 eV) signal, their strength is found to increase with ingot height. As the content of the transition metal impurities in the ingot is supposed to increase with height, this supports a reported link between the D3 and D4 signals with Fe, as well as a link between D2 and other impurities. An emission previously found in multicrystalline material and labelled D07 (0.70 eV), is found to solely exist as the only DRL signal recorded by us in parasitic crystals, growing into the main mono‐like ingot from the crucible walls. This contradicts the common notion that the D1–D4 signals are strongly related to, and always follow dislocations. Total photoluminescence spectrum (right) and distribution (left) of the PL signal with centre energy 0.70 eV emanating from the parasitic crystals growing into the bulk mono‐like Si crystal from the crucible walls.

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Section: Resultsmentioning

confidence: 92%

Section: Discussionmentioning

confidence: 99%

Defect related radiative recombination in mono-like crystalline silicon wafers

Olsen

Bergan

Mehl

et al. 2017

Phys. Status Solidi A

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“…Similar to EBSD 55 , SAROM can be used for the study of extended defects like dislocations and grain boundaries, which e.g., directly correlate with the efficiency of solar cells.…”

Section: Resultsmentioning

confidence: 99%

Fast and quantitative 2D and 3D orientation mapping using Raman microscopy

et al. 2019

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Non-destructive orientation mapping is an important characterization tool in materials science and geoscience for understanding and/or improving material properties based on their grain structure. Confocal Raman microscopy is a powerful non-destructive technique for chemical mapping of organic and inorganic materials. Here we demonstrate orientation mapping by means of Polarized Raman Microscopy (PRM). While the concept that PRM is sensitive to orientation changes is known, to our knowledge, an actual quantitative orientation mapping has never been presented before. Using a concept of ambiguity-free orientation determination analysis, we present fast and quantitative single-acquisition Raman-based orientation mapping by simultaneous registration of multiple Raman scattering spectra obtained at different polarizations. We demonstrate applications of this approach for two- and three-dimensional orientation mapping of a multigrain semiconductor, a pharmaceutical tablet formulation and a polycrystalline sapphire sample. This technique can potentially move traditional X-ray and electron diffraction type experiments into conventional optical laboratories.

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“…Luminescence imaging is an established method for inspection and characterization of silicon solar cells and modules in a laboratory setting. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] Carrying through the same type of analysis outdoor in the PV plants for the purpose of quality control is challenging due to uncontrollable light conditions. Quality control of PV modules in the field can be carried out by demounting and inspecting them with electroluminescence (EL) imaging in a closed laboratory setting 15 or by using a mobile laboratory for on-site inspections.…”

Section: Introductionmentioning

confidence: 99%

“…Outdoor luminescence imaging has therefore been carried out in the dark, [17][18][19] very low light conditions [20][21][22] as well as in daylight. [23][24][25][26][27][28][29][30][31][32][33][34][35] The basis of photoluminescence (PL) imaging is charge carrier excitation with an illumination source which can be a laser, 6,21 LEDs, 2,36 or sunlight. [27][28][29][30][31]34,35 However, the reflected light from the illumination source needs to be accounted for.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence imaging of silicon modules in a string

Vuković

Høiaas

Jakovljević

et al. 2022

Progress in Photovoltaics

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Spectral imaging techniques are a powerful tool for surveillance and monitoring of degradation mechanisms in PV modules. Luminescence images of solar modules have until recently been predominantly acquired in controlled laboratory settings. Recent attempts have been made in detecting luminescence in daylight. This study aims to present a proof of concept for detection of photoluminescence with sunlight excitation. It enables imaging of several modules in a string as well as several strings simultaneously by changing the operating point through wireless and contactless communication with one or more string inverters. This new approach is validated with the electroluminescence technique as well as with an already established photoluminescence technique under sunlight excitation. Due to the string inverter's reaction time, the change in illumination results in lower image quality. However, with a more up-to-date imaging equipment, this approach is promising for identification of certain degradation mechanisms which can be detected with lower resolution such as large area damage and inactive areas. Further studies are needed to optimize the method and potentially use it in connection with an unmanned aerial vehicle inspection.

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Defects in Multicrystalline Si Wafers Studied by Spectral Photoluminescence Imaging, Combined with EBSD and Dislocation Mapping

Cited by 10 publications

References 10 publications

Defect related radiative recombination in mono-like crystalline silicon wafers

Defect related radiative recombination in mono-like crystalline silicon wafers

Fast and quantitative 2D and 3D orientation mapping using Raman microscopy

Photoluminescence imaging of silicon modules in a string

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