Defects in silicon plastically deformed at room temperature

Abstract

The article [1] describes specific features of positron trapping in silicon plastically deformed at room temperature. The results are related to the dislocation core structure and the inhomogeneous deformation. The picture shows the probability density function of a positron localized in a vacancy in silicon. The calculation was performed with the superimposed‐atom model. The degree of localization and consequently the defect‐related positron lifetime vary for different open‐volume defects, such as vacancies, voids, and dislocations. The first author, Hartmut S. Leipner, is CEO of the Center of Materials Science of the University Halle–Wittenberg. His research activities are focused on the characterization of extended defects in semiconductors.