Defects in silicon plastically deformed at room temperature

Leipner, Hartmut S.; Wang, Z.; Gu, Huidong; Mikhnovich, V.V.; Бондаренко, В. А.; Krause‐Rehberg, R.; Demenet, J. L.; Rabier, J.

doi:10.1002/pssa.200306819

Cited by 8 publications

(3 citation statements)

References 9 publications

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“…19. These clusters are not stable in view of results on Fz-Si plastically deformed at room temperature: 31 Vacancy clusters were formed that gave rise to a positron lifetime of 460 ps which was unaffected by annealing to ϳ800°C for 1 2 h, and the lifetime suggests an average size of 18 vacancies, nearly twice that found in this work.…”

Section: Samplementioning

confidence: 54%

Annealing of electron-, proton-, and ion-produced vacancies in Si

et al. 2006

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Positron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles ͑e − , p, Kr͒ with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to divacancies, whereas the damage from ion implantation ͑Kr͒ was mainly in the form of four-vacancy clusters, with only a small fraction of vacancies in the form of divacancies. In the case of impurity-lean Si, detailed isothermal annealing at various temperatures between 125°C and 500°C showed that after an initial fast decrease in divacancy concentration, a much slower process of vacancy agglomeration took place. At 450°C agglomeration steadily progressed even after 30 h of annealing at which point the average cluster size corresponded to ten monovacancies. In impurity-rich Si, containing oxygen and dopants, there is nearly no initial decrease in vacancy concentration, and isothermal and isochronal annealings showed that vacancy agglomeration was also nearly absent. Doppler data showed that vacancy-dopant complexes slowly acquired oxygen as annealing progressed, and these complexes survived annealing at 500°C for many hours. Measurements between 8 K and 530 K on samples containing divacancies, or larger clusters, showed a temperature dependence of the positron trapping rate that cannot be explained by the clusters being negatively charged, but can be explained if neutral clusters have a weakly bound positron state which at low temperatures makes trapping more efficient. Generally, the present positron experiments have given an indication for the type of defects that survive annealing at temperatures where electron paramagnetic resonance and infrared spectroscopy yield little useful information.

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Section: Samplementioning

confidence: 54%

Annealing of electron-, proton-, and ion-produced vacancies in Si

et al. 2006

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“…A pronounced maximum positron lifetime throughout the measuring temperature occurs after annealing at 600 • C. This maximum positron lifetime has been interpreted by dislocation motion and relaxing. The interaction of dislocations gives rise to the formation of new vacancies, which agglomerate to stable vacancy clusters [12]. At above 600 • C the stability limit of vacancy clusters is reached, and they start to decay by a big margin so a distinct annealing stage occurs at above 700 • C.…”

Section: Experimental Details and Resultsmentioning

confidence: 99%

Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy

Pang

Leipner

Krause‐Rehberg

et al. 2012

Semicond. Sci. Technol.

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Defects in phosphorus-doped float-zone silicon single crystals plastically deformed at 800 • C were studied by the positron lifetime technique. The lifetime measurements were performed for the undeformed, as-deformed and all annealed samples at temperatures varying from 20 K to 300 K. Three kinds of defects including vacancy clusters, dislocation-bound vacancies and undisturbed dislocations are induced by deformation. It is proposed that the dislocation could be charged and this was well proved by fitting the experimental positron lifetime with all possible positron trapping models. The fitted results indicate that during the annealing process dislocation-bound vacancies are quite stable and they cannot be annealed out until a thermal treatment at 1300 • C, when the negatively charged dislocation acts as shallow positron traps which influence significantly the measured average positron lifetime. The density of the dislocation line decreases unconspicuously below the annealing temperature of 1000 • C, and the transition rate between the related defects of the dislocation line and vacancies is almost constant.

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“…We need to systemize these equations before fitting the associated parameters because of the regular format of the language in Matlab. The positron lifetime in the defect-free bulk τ b is 218 ps, and for the other two positron lifetimes τ t is 300 ps [11] and τ st is 240 ps; besides we fix τ viod to 500 ps [12] . So four kinds of positron annihilation rates can be calculated as…”

Section: Experimental Data Processingmentioning

confidence: 99%

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Pang¹,

Li²,

Zhou³

et al. 2012

Plasma Sci. Technol.

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An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

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Defects in silicon plastically deformed at room temperature

Cited by 8 publications

References 9 publications

Annealing of electron-, proton-, and ion-produced vacancies in Si

Annealing of electron-, proton-, and ion-produced vacancies in Si

Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

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