Defects induced by MeV H+ implantation for exfoliating of free-standing GaN film

Huang, Kai; You, Tiangui; Jia, Qi; Yi, Ailun; Zhang, Shibin; Zhang, Runchun; Lin, Jiajie; Zhou, Min; Wang, Yu; Zhang, Bo; Ou, Xin; Wang, Xi

doi:10.1007/s00339-017-1508-y

Cited by 5 publications

(4 citation statements)

References 41 publications

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“…Once the target allows for the use of the kHz repetition rate SYLOS laser at ELI-ALPS, it would be a prototype for a 2.45 MeV neutron source. Additionally, the implantation of protons with an energy of ∼1 MeV generated by a high repetition rate laser can also be used in semiconductor technology as a new technique to obtain free-standing semiconductor films with thicknesses in the range of 10-20 µm [57].…”

Section: Discussionmentioning

confidence: 99%

Ion acceleration with few-cycle relativistic laser pulses from foil targets

Ter‐Avetisyan

Varmazyar

Singh

et al. 2023

Plasma Phys. Control. Fusion

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Ion acceleration resulting from the interaction of 11 fs laser pulses of ~35 mJ energy with ultrahigh contrast (<10^-10), and 10^19 W/cm^2 peak intensity with foil targets made of various materials and thicknesses at normal (0◦) and 45◦ laser incidence is investigated. The maximum energy of the protons reached ~1.4 MeV accelerated in laser propagation direction and ~1.2 MeV in opposite direction from formvar target. An energy conversion efficiency from the laser to the proton beam is estimated to be as high as ~1.4 % at 45◦ laser incidence using a 51 nm-thick Al target. The high laser contrast indicates the predominance of vacuum heating via the Brunel’s effect as an absorption mechanism involving a tiny pre-plasma at the target front. Experimental results are in reasonable agreement with theoretical estimates where proton acceleration from the target front side into the backward direction is well explained by the Coulomb explosion of a charged cavity formed in a tiny preplasma, while forward proton acceleration is likely to be a two-step process: protons are first accelerated at a the target front side cavity and then further boosted in energy through the target back side via TNSA mechanism.

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Section: Discussionmentioning

confidence: 99%

Ion acceleration with few-cycle relativistic laser pulses from foil targets

Ter‐Avetisyan

Varmazyar

Singh

et al. 2023

Plasma Phys. Control. Fusion

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“…Typically, the diameter of the wire saw is greater than 150 µm and the total kerf loss is greater than 200 µm. To reduce the kerf loss and cost of GaN substrates, various new slicing and thinning methods have been attempted 27 – 35 . However, none of them have been put to practical use.…”

Section: Introductionmentioning

confidence: 99%

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Tanaka

Sugiura

Kawaguchi

et al. 2021

Sci Rep

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We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.

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“…To separate a GaN film from a native GaN substrate several approaches were proposed: chemical lift-off process [30]; porous release layers created by chemical [31], electrochemical [32,33] or dry [34] etching of GaN substrate; controlled spalling [35]; laser lift-off with an In-GaN release layer [5]; ion implantation [36][37][38][39]; and freecarrier-absorption laser lift-off [40].…”

mentioning

confidence: 99%

“…The lift-off methods based on the use of an intermediate layer require a complicated epitaxy process. The ion implantation method does not allow separating epitaxial device structures due to a large number of point defects formed by the implantation process [38,39,41]. The freecarrier-absorption LLO method is limited to separating undoped films from a heavily doped substrate [40].…”

mentioning

confidence: 99%

Laser slicing: A thin film lift-off method for GaN-on-GaN technology

et al. 2019

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A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 µm and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the laser slicing lift-off was demonstrated.

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Defects induced by MeV H+ implantation for exfoliating of free-standing GaN film

Cited by 5 publications

References 41 publications

Ion acceleration with few-cycle relativistic laser pulses from foil targets

Ion acceleration with few-cycle relativistic laser pulses from foil targets

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Laser slicing: A thin film lift-off method for GaN-on-GaN technology

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