Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors

Abstract

Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate.Two electron traps at Ec+0.14eV(E13) and Ec-0.70eV(E4) and a hole trap at Ec-0.14eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.

An extended drift-diffusion model of semi-insulating n-GaAs Schottky-barrier diodes

“…For a quantitative evaluation of this expectation, figure 13 reports active thickness as a function of the applied voltage. Here, experimental data are deduced by OBIC measurements [25]. Theoretical calculations corresponding to the field profiles of figure 9 include a constant contribution of 14 µm experimentally detected at zero bias but not accounted for in the theoretical model which predicts a negligible active thickness at zero bias.…”

Optical Beam Induced Current Investigations of Particle Detectors

“…2) it is possible to deduce the depletion region width W, assumed as the photocurrent profile half-maximum width. As already reported [4], for V a < 20 V the value of the net effective charge density due to all (shallow and deep) ionized acceptor and donor levels, N eff , which fits the square root behavior of Fig. 3.…”

“…In particular, this made OBIC a helpful tool for investigating radiation detectors, made both on semiconductors and semi-insulating materials [4,5]. In particular, this made OBIC a helpful tool for investigating radiation detectors, made both on semiconductors and semi-insulating materials [4,5].…”

Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons

“…Hence, it is essential to predict its irradiation tolerance and clarify the differences in irradiation effects among different GaAs. In recent years, extensive studies have been conducted on the proton irradiation effects of GaAs [13][14][15][16][17][18]. However, there is a shortage of proton irradiation on the difference between intrinsic GaAs and Si-doped GaAs.…”