Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP

Photo-ESR and Absorption Studies of Antisite Defects in GaP

“…ESR spectrum of WA1 and its angular dependence were very similar to what was observed in plastically deformed GaP and GaAs and attributed to gallium antisite defect [2]. Such identification is consistent with our observation of similarity of WA1 defect introduction rate during n-irradiation [1] post-irradiation annealing behavior [3] in compariSon with other antisite defectS: PGa in GaP [3] and AsG a in GaAs crystals [4].…”

“…Our previous ESR studies revealed that mainly two defects were created during n-irradiation of GaP crystals: phosphorus antisite (PG a ) and the defect labelled WA1 [1,3]. ESR spectrum of WA1 and its angular dependence were very similar to what was observed in plastically deformed GaP and GaAs and attributed to gallium antisite defect [2].…”

“…Moreover, the unusual, in ESR experiments, temperature dependence of PG a P4 amplitude in n-irradiated GaP crystals observed in [1,3] was explained.…”

“…Our previous ESR studies of n-irradiated GaP crystals revealed unusual temperature behavior of PG aP4 signal [1,3]. The intensity of PG a P4 line for n-irradiated samples increaSed with temperature increaSe, whereas typically ESR lines decrease with increasing temperature.…”

“…ESR measurements proved that phosphorus antisite defects PG a in GaP introduced by n-irradiation were exactly the same as in as grown crystals, i.e. they consisted of central phosphorus atom surrounded by four phosphorus ligands, PG aP 4 [1]. However, very little is known about cation antisite defects in III-V semiconducting materials.…”