Definition of geometries with complicated, curved boundaries for electron beam pattern generation

Klein, U.; Götz, Fabian

doi:10.1016/0167-9317(89)90108-1

Cited by 3 publications

(1 citation statement)

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“…While much attention has been focused on file size reduction without sacrificing ͑and even improving͒ the pattern accuracy at layer-out level, 8,9 our experience with high resolution zone plate fabrication shows that even for an accurately segmented ring pattern, the fidelity of its exposure could be degraded to an unacceptable level due to the exposure strategy. Patterns for other applications such as diffractive optics fabrication require accurate, curved structures.…”

Section: Introductionmentioning

confidence: 99%

Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction

Tennant²,

Jacobsen

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Multiple beam sub-80 -nm lithography with miniature electron beam column arraysThe width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub-50-nm scale in Gaussian e-beam lithography. The authors' analysis shows that this orientation dependence of linewidth variation originates from the nonuniformity of discrete primitive filling in Cartesian coordinates. Two correction schemes based on pattern segmentation are proposed. Test exposures of high resolution zone plate patterns show that both two schemes work well; a double-insert scheme is superior in terms of dose distribution uniformity.

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Section: Introductionmentioning

confidence: 99%