Definitive identification of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="italic">D</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">−</mml:mi></mml:mrow></mml:msup></mml:mrow></mml:math>centers in GaAs quantum wells by tilt-induced line splitting in a magnetic field

Er, Mueller; Dm, Larsen; Waldman, J.; Wd, Goodhue

doi:10.1103/physrevlett.68.2204

Cited by 67 publications

(30 citation statements)

References 11 publications

(16 reference statements)

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“…Other results obtained in [7] correspond to the intermediate and narrow QWs (d/a 0 ≤ 2) for which the energies W are positive. A discrepancy in the binding energy is of the same order as those obtained by the various numerical methods [2,3,6,7]. It is therefore concluded that the method developed can be readily extended to the problem of the charged donor in the presence of electric and strong magnetic fields.…”

Section: Equation (12) Then Becomesmentioning

confidence: 55%

“…Using the Monte Carlo method, Pang and Louie [2] calculated the binding energy of the ground state of the D − positioned at the centre of the narrow QW. Mueller et al [3] and Dunn et al [4] studied the problem by the variational approach based on the Chandrasekhar-type [5] and Gaussian-like trial functions, respectively. Dzubenko and Sivachenko [6] formed the wavefunction of the D − from the wavefunctions of the free electron corresponding to several Landau levels and the ground size-quantization level.…”

Section: Introductionmentioning

confidence: 99%

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D−centre in a quantum well in the presence of a strong magnetic field

Monozon

2001

Superlattices and Microstructures

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Section: Equation (12) Then Becomesmentioning

confidence: 55%

Section: Introductionmentioning

confidence: 99%

D−centre in a quantum well in the presence of a strong magnetic field

Monozon

2001

Superlattices and Microstructures

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“…The confinement effect imposed by the quantum well on both the D --and D 0 binding energies in different semiconductor heterostructures has been analyzed in a considerable number of theoretical investigations [11][12][13][14][15][16][17][18][19][20][21]. The diffusion quantum Monte Carlo [11,12] and variational [13][14][15][16][17][18][19][20][21] methods have been used to calculate the D --groundstate binding energy in quantum wells (QWs) and quantum dots (QDs).…”

Section: Introductionmentioning

confidence: 99%

Off-Center Neutral and Negatively Charged Donor Impurities in Semiconductor Heterostructures: Fractal Dimension Method

Mikhailov

Betancur

Escorcia

et al. 2002

phys. stat. sol. (b)

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We reduce the problems of the on-and off-center D 0 and D --S-states in semiconductor heterostructures to the similar ones in an isotropic effective space with variable fractional dimension starting from the variational principle. The dimension of this space is defined as a scaling parameter that relates the radii of a set of spherical boxes to the charge densities within induced by the free electron ground state in the heterostructure. Explicit expressions for the effective space dimensionality in a quantum well (QW), quantum-well wire (QWW) and a quantum dot (QD) are found by using this definition. To solve the wave equations for the free electron ground state in the heterostructure and for the hydrogen-like atom S-states in the fractional-dimensional space, we use the numerical trigonometric sweep method. The three-parameter Hylleraas trial function is used to solve the similar problem for a negative-hydrogen-like ion in the effective space. Ground state binding energies for off-center neutral and negatively charged donors in QWs and spherical QDs are calculated. Our results are in a good agreement with those of the variational and Monte Carlo methods. In addition, novel results for the D --binding energy as a function of the cylindrical GaAs/Ga 0.7 Al 0.3 As QWW radius and the magnetic field intensity are presented. It is found that the D --binding energy in the wire increases from 0.055 Ry * up to about 1.230 Ry * as the radius decreases to 30 A. It is also shown that the magnetic field produces a considerable enhancement of negative-donor binding energy in QWW only for radii greater than 100 A.

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“…Shallow-negative donors D ± ± (i.e. neutral shallow donors that bind an additional electron) have been experimentally observed [1,2] in GaAs±(Ga,Al)As quantum wells (QWs). It has been also demonstrated [3,4] by variational calculations that the two-dimensional D ± ± binding energy is about ten times larger than the three-dimensional one, and the impurity mean-value radius is reduced by half when its form is changed from spherical to planar.…”

mentioning

confidence: 99%

Model Structure for D? States in GaAs-(Ga,Al)As Quantum Wells

Mikhailov

Betancur

Marín

et al. 1998

phys. stat. sol. (b)

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A simple model in which both electrons of the shallow-negative donor D ± ± are instantaneously localized approximately at the same distance with respect to the ion nucleus is considered. Within this model, the D ± ± Hamiltonian becomes separable, and the effect of the electron±electron interaction is essentially taken into account by the interaction of each of the electrons with a renormalized-nucleus effective charge which depends on the angle between the two electron vector positions. The trial function is taken as a product of two three-parameter one-particle wave functions to calculate the ground state energy as a function of the angle. Theoretical results for the D ± ± energy, including zero-point energy corrections within the harmonic approximation, are obtained for D ± ± states centered in GaAs±(Ga,Al)As quantum wells as a function of the well width, and for different values of the magnetic field, applied perpendicular to the interfaces of the heterostructure. Our results are in good agreement with experimental data and with theoretical calculations using variational or Monte Carlo techniques.Low-dimensional semiconductor microstructures with neutral and charged impurities and impurity complexes bring about new phenomena with a lot of challenges to both theoretical and experimental physics. Shallow-negative donors D ± ± (i.e. neutral shallow donors that bind an additional electron) have been experimentally observed [1,2] in GaAs±(Ga,Al)As quantum wells (QWs). It has been also demonstrated [3,4] by variational calculations that the two-dimensional D ± ± binding energy is about ten times larger than the three-dimensional one, and the impurity mean-value radius is reduced by half when its form is changed from spherical to planar. For this reason, optical excitations of the D ± ± complex may fall in the same spectral region [5] of the neutral D 0 state in a QW. The identification of the D ± ± features in a given experimental spectrum is, therefore, not straightforward and it suggests the need of a careful theoretical analysis. Any calculation of the D ± ± spectrum has to take into account the electronic correlation, which is responsible for the system stability. Variational [4 to 6] and Monte Carlo [7] methods have been used to find the D ± ± binding energy in a QW. Both types of calculations require a set of adjustable parameters and quite long computational times (for example, the Chandrasekhar-type [8] trial function with seven variational parameters [6] has been used). Due to the computational cost of such calculations, no detailed studies of the evolution of the D ± ± spectrum as a function of well width, barrier height, donor position, etc. were performed. On the other hand, in few-particle systems in

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Definitive identification ofD−centers in GaAs quantum wells by tilt-induced line splitting in a magnetic field

Cited by 67 publications

References 11 publications

D−centre in a quantum well in the presence of a strong magnetic field

D−centre in a quantum well in the presence of a strong magnetic field

Off-Center Neutral and Negatively Charged Donor Impurities in Semiconductor Heterostructures: Fractal Dimension Method

Model Structure for D? States in GaAs-(Ga,Al)As Quantum Wells

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