Deformation of neutron-irradiated copper single crystals

Atomic-scale plasticity in the presence of Frank loops

“…Frank loops in stainless steels (SS) [4]). The yield drop is associated to the localization of the deformation in shear bands that are cleared, in the course of the deformation, of all defects visible in TEM [5], as recently observed in-situ in copper [6]. In the latter case, evidence that the clear bands are formed by the passage of dislocation pile-ups originating from heterogeneities (grain boundaries and cracks) was obtained.…”

Effects of Irradiation on Ductility.

“…The channels are generally clean except f o r deformation-induced tangles and mF dipoles. The radiation defects are completely eliminated from the channels (43) and not simply pushed t o the edge of the channel, as was originally suggested (4.0) . Sharp (43) examined annealed specimens containing channels and found no development of structure within t h e channels, as wni11d be expected i f they contained a high d e n~i t y of paint defects o r point defect clusters below the resolution l i m i t of the microscope.…”

“…F i r s t , deformation i s usually i n i t i a t e d near one of the grips i n a t e n s i l e t e s t and then spreads over the specimen as a Luders band; and second, the s l i p steps within the deformed region are deep and relatively widely separated by undeformed areas, as contrasted with a miform dist;ribution of f i n e clip bands i n unirradiated materials. Transmission electron m i kroscopy (40,41,42,43) of skch crystals has shown channels i n which the radiation-induced defect structure has been eliminated (see Fig. 10) .…”

Investigation of the Nanostructures Formation in the Irradiated by γ-Quanta Single-Crystal Silicon with Ultrasonic Method

“…As known, the energy of dislocation have approximately value ~ 10 × 10 −19 joule (or around 6 eV) at the distance between atoms along of the dislocation line (~2.5 Å). For single crystal silicon the amount of energy of such dislocation is 19 eV [12]. There is a strong probability that such high energy will increase the annihilation of the dislocations.…”

“…Then we had observed the time-dependent behaviour of internal friction. Dependence internal friction from the irradiation dose (Q (D) obtained as result of irradiate (see Figure 1) correspond to such process of deformation strengthening that observed in the silicon at the temperature around 750˚C [11,12].…”